Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal
The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-impla...
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Veröffentlicht in: | Journal of applied physics 2019-06, Vol.125 (21) |
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creator | Tabata, Toshiyuki Aubin, Joris Huet, Karim Mazzamuto, Fulvio |
description | The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-implanted SiGe 50% epilayer. Dopant segregation is of great interest for future nodes to further improve contact resistivity in transistors. However, there is a lack of in-depth study about their activation. In this paper, we first reported very high Ga activation well above the equilibrium solid solubility limit when the partial Si0.5Ge0.5:Ga melt regime was assessed. The dopant segregation phenomenon, together with the surface morphology change of the Si0.5Ge0.5:Ga epilayer, was then induced by MLA. A very clear honeycomblike surface pattern was observed in the full Si0.5Ge0.5:Ga melt regime, while it was less pronounced in the partial melt regime. This honeycomblike pattern would be the result of dopant precipitation at the liquid–solid interface during solidification. Our simulation results highlighted that solidification velocity could play a key role in the substitutional incorporation of Ga atoms in a SiGe lattice. |
doi_str_mv | 10.1063/1.5096889 |
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To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-implanted SiGe 50% epilayer. Dopant segregation is of great interest for future nodes to further improve contact resistivity in transistors. However, there is a lack of in-depth study about their activation. In this paper, we first reported very high Ga activation well above the equilibrium solid solubility limit when the partial Si0.5Ge0.5:Ga melt regime was assessed. The dopant segregation phenomenon, together with the surface morphology change of the Si0.5Ge0.5:Ga epilayer, was then induced by MLA. A very clear honeycomblike surface pattern was observed in the full Si0.5Ge0.5:Ga melt regime, while it was less pronounced in the partial melt regime. This honeycomblike pattern would be the result of dopant precipitation at the liquid–solid interface during solidification. Our simulation results highlighted that solidification velocity could play a key role in the substitutional incorporation of Ga atoms in a SiGe lattice.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5096889</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Activation ; Activation analysis ; Applied physics ; Chemical precipitation ; Dopants ; Equilibrium ; Excimers ; Germanium ; Laser beam annealing ; Lasers ; Liquid-solid interfaces ; Morphology ; Semiconductor devices ; Silicon germanides ; Solid solubility ; Solidification ; Solids ; Transistors</subject><ispartof>Journal of applied physics, 2019-06, Vol.125 (21)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). 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To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-implanted SiGe 50% epilayer. Dopant segregation is of great interest for future nodes to further improve contact resistivity in transistors. However, there is a lack of in-depth study about their activation. In this paper, we first reported very high Ga activation well above the equilibrium solid solubility limit when the partial Si0.5Ge0.5:Ga melt regime was assessed. The dopant segregation phenomenon, together with the surface morphology change of the Si0.5Ge0.5:Ga epilayer, was then induced by MLA. A very clear honeycomblike surface pattern was observed in the full Si0.5Ge0.5:Ga melt regime, while it was less pronounced in the partial melt regime. This honeycomblike pattern would be the result of dopant precipitation at the liquid–solid interface during solidification. Our simulation results highlighted that solidification velocity could play a key role in the substitutional incorporation of Ga atoms in a SiGe lattice.</description><subject>Activation</subject><subject>Activation analysis</subject><subject>Applied physics</subject><subject>Chemical precipitation</subject><subject>Dopants</subject><subject>Equilibrium</subject><subject>Excimers</subject><subject>Germanium</subject><subject>Laser beam annealing</subject><subject>Lasers</subject><subject>Liquid-solid interfaces</subject><subject>Morphology</subject><subject>Semiconductor devices</subject><subject>Silicon germanides</subject><subject>Solid solubility</subject><subject>Solidification</subject><subject>Solids</subject><subject>Transistors</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kNFKwzAUhoMoOKcXvkHAK4XOk6RpkksZbgoDhTlvQ5qmW0fXziQb7O2tduiF4NXhP3znP_AhdE1gRCBj92TEQWVSqhM0ICBVIjiHUzQAoCSRSqhzdBHCGoAQydQAvc7d0ruliVXbYNMU2NhY7fvYlnhqcNXgVbVc4anDtm2iayKeV13ID3jxjjeujrg2wfnuunGmvkRnpamDuzrOIVpMHt_GT8nsZfo8fpgllikWE8p4nuWQCmMsVY4RoWxaElrmhgnJDc-kzQVYKgwHzlMHgnJaZMC6fUFLNkQ3fe_Wtx87F6JetzvfdC81pSylqQROO-q2p6xvQ_Cu1FtfbYw_aAL6S5gm-iisY-96Ntgqfhv4gfet_wX1tij_g_82fwJzbXcj</recordid><startdate>20190607</startdate><enddate>20190607</enddate><creator>Tabata, Toshiyuki</creator><creator>Aubin, Joris</creator><creator>Huet, Karim</creator><creator>Mazzamuto, Fulvio</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4923-5663</orcidid></search><sort><creationdate>20190607</creationdate><title>Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal</title><author>Tabata, Toshiyuki ; Aubin, Joris ; Huet, Karim ; Mazzamuto, Fulvio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-235b6b047aac29e3179c4f12fba3785a568cb70c27a50554e07252d6038cbd2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Activation</topic><topic>Activation analysis</topic><topic>Applied physics</topic><topic>Chemical precipitation</topic><topic>Dopants</topic><topic>Equilibrium</topic><topic>Excimers</topic><topic>Germanium</topic><topic>Laser beam annealing</topic><topic>Lasers</topic><topic>Liquid-solid interfaces</topic><topic>Morphology</topic><topic>Semiconductor devices</topic><topic>Silicon germanides</topic><topic>Solid solubility</topic><topic>Solidification</topic><topic>Solids</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tabata, Toshiyuki</creatorcontrib><creatorcontrib>Aubin, Joris</creatorcontrib><creatorcontrib>Huet, Karim</creatorcontrib><creatorcontrib>Mazzamuto, Fulvio</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tabata, Toshiyuki</au><au>Aubin, Joris</au><au>Huet, Karim</au><au>Mazzamuto, Fulvio</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal</atitle><jtitle>Journal of applied physics</jtitle><date>2019-06-07</date><risdate>2019</risdate><volume>125</volume><issue>21</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-implanted SiGe 50% epilayer. Dopant segregation is of great interest for future nodes to further improve contact resistivity in transistors. However, there is a lack of in-depth study about their activation. In this paper, we first reported very high Ga activation well above the equilibrium solid solubility limit when the partial Si0.5Ge0.5:Ga melt regime was assessed. The dopant segregation phenomenon, together with the surface morphology change of the Si0.5Ge0.5:Ga epilayer, was then induced by MLA. A very clear honeycomblike surface pattern was observed in the full Si0.5Ge0.5:Ga melt regime, while it was less pronounced in the partial melt regime. This honeycomblike pattern would be the result of dopant precipitation at the liquid–solid interface during solidification. Our simulation results highlighted that solidification velocity could play a key role in the substitutional incorporation of Ga atoms in a SiGe lattice.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5096889</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-4923-5663</orcidid></addata></record> |
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subjects | Activation Activation analysis Applied physics Chemical precipitation Dopants Equilibrium Excimers Germanium Laser beam annealing Lasers Liquid-solid interfaces Morphology Semiconductor devices Silicon germanides Solid solubility Solidification Solids Transistors |
title | Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal |
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