Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal

The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-impla...

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Veröffentlicht in:Journal of applied physics 2019-06, Vol.125 (21)
Hauptverfasser: Tabata, Toshiyuki, Aubin, Joris, Huet, Karim, Mazzamuto, Fulvio
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container_title Journal of applied physics
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creator Tabata, Toshiyuki
Aubin, Joris
Huet, Karim
Mazzamuto, Fulvio
description The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we used an UV excimer nanosecond laser annealing and studied the segregation and activation of dopants in a Ga-implanted SiGe 50% epilayer. Dopant segregation is of great interest for future nodes to further improve contact resistivity in transistors. However, there is a lack of in-depth study about their activation. In this paper, we first reported very high Ga activation well above the equilibrium solid solubility limit when the partial Si0.5Ge0.5:Ga melt regime was assessed. The dopant segregation phenomenon, together with the surface morphology change of the Si0.5Ge0.5:Ga epilayer, was then induced by MLA. A very clear honeycomblike surface pattern was observed in the full Si0.5Ge0.5:Ga melt regime, while it was less pronounced in the partial melt regime. This honeycomblike pattern would be the result of dopant precipitation at the liquid–solid interface during solidification. Our simulation results highlighted that solidification velocity could play a key role in the substitutional incorporation of Ga atoms in a SiGe lattice.
doi_str_mv 10.1063/1.5096889
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Activation
Activation analysis
Applied physics
Chemical precipitation
Dopants
Equilibrium
Excimers
Germanium
Laser beam annealing
Lasers
Liquid-solid interfaces
Morphology
Semiconductor devices
Silicon germanides
Solid solubility
Solidification
Solids
Transistors
title Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal
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