930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
We report on the design and fabrication of ultrahigh current density GaN/AlN double barrier resonant tunneling diodes grown via rf-plasma assisted molecular-beam epitaxy. The device structure was grown on a metal-organic chemical vapor deposition GaN-on-sapphire template. The devices displayed repea...
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Veröffentlicht in: | Applied physics letters 2019-05, Vol.114 (20) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report on the design and fabrication of ultrahigh current density GaN/AlN double barrier resonant tunneling diodes grown via rf-plasma assisted molecular-beam epitaxy. The device structure was grown on a metal-organic chemical vapor deposition GaN-on-sapphire template. The devices displayed repeatable room temperature negative differential resistance with peak tunneling current densities (Jp) between 637 and 930 kA/cm2. Analysis of temperature dependent measurements revealed the presence of severe self-heating effects, which allow strong phonon scattering that deteriorates the electron quantum transport. Finally, a qualitative comparison to the same structure grown on a low dislocation density freestanding GaN substrate has shown that sapphire-based templates are a feasible alternative. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5095056 |