Anisotropic etching of β-Ga2O3 using hot phosphoric acid

We report a systematic investigation on the anisotropic etching behavior of β-Ga2O3. A wagon wheel pattern was designed and fabricated on (010)-oriented β-Ga2O3 substrates. The wet etching in hot phosphoric acid was found to be effective in reducing the sidewall roughness caused by plasma dry etchin...

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Veröffentlicht in:	Applied physics letters 2019-07, Vol.115 (1)
Hauptverfasser:	Zhang, Yuewei, Mauze, Akhil, Speck, James S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Applied physics Dependence Electric fields Electronic devices Etching Fins Gallium oxides Inclination angle Phosphoric acid Substrates Wagons
Online-Zugang:	Volltext
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