Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties
Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-dimensional semiconductors in their stable trigonal phases with high electrical conductivity and low thermal conductivity, but their thermoelectric properties have not been systematically investigated. Here, in this let...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2019-02, Vol.114 (5) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 5 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 114 |
creator | Wei, Tian-Ran Hu, Ping Chen, Hongyi Zhao, Kunpeng Qiu, Pengfei Shi, Xun Chen, Lidong |
description | Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-dimensional semiconductors in their stable trigonal phases with high electrical conductivity and low thermal conductivity, but their thermoelectric properties have not been systematically investigated. Here, in this letter, we prepared polycrystalline Ge2Sb2Te5, GeSb2Te4, and GeSb4Te7 bulk materials and studied the thermoelectric transport properties. Large anisotropy in Seebeck coefficient as well as in electrical conductivity is observed, which is not commonly reported in polycrystalline thermoelectric materials. Combining experimental study and theoretical calculations, one can find that this phenomenon is attributed to the asymmetry of a material's band structure. Maximal zT values of 0.46–0.60 are achieved at 750 K, indicating that GeSbTe-based compounds are promising thermoelectric materials for mid-temperature applications. |
doi_str_mv | 10.1063/1.5083863 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_5083863</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2177357110</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-381fe5b548c31b5b75439c61ec42888bf4d755b4dc6953a22abdd7ca893631b63</originalsourceid><addsrcrecordid>eNp9kEFLAzEQhYMoWKsH_0HAk8LWZLPZpEcpWoWCiPUcstmsTelu1kzW4r83pUUPgqdhmO-94T2ELimZUFKyWzrhRDJZsiM0okSIjFEqj9GIEMKycsrpKToDWKeV54yNUHgZNLgsbn1Wu9Z24HynN3huX6ulxca3vR-6GrAG3AffOnDdO44rG1pvN9bE4AxudbTB6Q3grYsrrDsHPgbfp1MMuoPeh7hT9zZEZ-EcnTQJtheHOUZvD_fL2WO2eJ4_ze4WmWG5iBmTtLG84oU0jFa8ErxgU1NSa4pcSlk1RS04r4rapFhM57mu6loYLaesTIKSjdHV3je9_hgsRLX2Q0jpQOVUCMYFpSRR13vKBA8QbKP64FodvhQlalepoupQaWJv9iwYF3VMVf3Anz78gqqvm__gv87fg8KHTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2177357110</pqid></control><display><type>article</type><title>Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Wei, Tian-Ran ; Hu, Ping ; Chen, Hongyi ; Zhao, Kunpeng ; Qiu, Pengfei ; Shi, Xun ; Chen, Lidong</creator><creatorcontrib>Wei, Tian-Ran ; Hu, Ping ; Chen, Hongyi ; Zhao, Kunpeng ; Qiu, Pengfei ; Shi, Xun ; Chen, Lidong</creatorcontrib><description>Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-dimensional semiconductors in their stable trigonal phases with high electrical conductivity and low thermal conductivity, but their thermoelectric properties have not been systematically investigated. Here, in this letter, we prepared polycrystalline Ge2Sb2Te5, GeSb2Te4, and GeSb4Te7 bulk materials and studied the thermoelectric transport properties. Large anisotropy in Seebeck coefficient as well as in electrical conductivity is observed, which is not commonly reported in polycrystalline thermoelectric materials. Combining experimental study and theoretical calculations, one can find that this phenomenon is attributed to the asymmetry of a material's band structure. Maximal zT values of 0.46–0.60 are achieved at 750 K, indicating that GeSbTe-based compounds are promising thermoelectric materials for mid-temperature applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5083863</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anisotropy ; Applied physics ; Binary alloys ; Dimensional stability ; Electrical resistivity ; Phase change materials ; Polycrystals ; Seebeck effect ; Thermal conductivity ; Thermoelectric materials ; Transport properties</subject><ispartof>Applied physics letters, 2019-02, Vol.114 (5)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-381fe5b548c31b5b75439c61ec42888bf4d755b4dc6953a22abdd7ca893631b63</citedby><cites>FETCH-LOGICAL-c327t-381fe5b548c31b5b75439c61ec42888bf4d755b4dc6953a22abdd7ca893631b63</cites><orcidid>0000-0002-8086-6407 ; 0000-0002-9977-3139 ; 0000-0002-5011-0932</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5083863$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76353</link.rule.ids></links><search><creatorcontrib>Wei, Tian-Ran</creatorcontrib><creatorcontrib>Hu, Ping</creatorcontrib><creatorcontrib>Chen, Hongyi</creatorcontrib><creatorcontrib>Zhao, Kunpeng</creatorcontrib><creatorcontrib>Qiu, Pengfei</creatorcontrib><creatorcontrib>Shi, Xun</creatorcontrib><creatorcontrib>Chen, Lidong</creatorcontrib><title>Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties</title><title>Applied physics letters</title><description>Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-dimensional semiconductors in their stable trigonal phases with high electrical conductivity and low thermal conductivity, but their thermoelectric properties have not been systematically investigated. Here, in this letter, we prepared polycrystalline Ge2Sb2Te5, GeSb2Te4, and GeSb4Te7 bulk materials and studied the thermoelectric transport properties. Large anisotropy in Seebeck coefficient as well as in electrical conductivity is observed, which is not commonly reported in polycrystalline thermoelectric materials. Combining experimental study and theoretical calculations, one can find that this phenomenon is attributed to the asymmetry of a material's band structure. Maximal zT values of 0.46–0.60 are achieved at 750 K, indicating that GeSbTe-based compounds are promising thermoelectric materials for mid-temperature applications.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Binary alloys</subject><subject>Dimensional stability</subject><subject>Electrical resistivity</subject><subject>Phase change materials</subject><subject>Polycrystals</subject><subject>Seebeck effect</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><subject>Transport properties</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLAzEQhYMoWKsH_0HAk8LWZLPZpEcpWoWCiPUcstmsTelu1kzW4r83pUUPgqdhmO-94T2ELimZUFKyWzrhRDJZsiM0okSIjFEqj9GIEMKycsrpKToDWKeV54yNUHgZNLgsbn1Wu9Z24HynN3huX6ulxca3vR-6GrAG3AffOnDdO44rG1pvN9bE4AxudbTB6Q3grYsrrDsHPgbfp1MMuoPeh7hT9zZEZ-EcnTQJtheHOUZvD_fL2WO2eJ4_ze4WmWG5iBmTtLG84oU0jFa8ErxgU1NSa4pcSlk1RS04r4rapFhM57mu6loYLaesTIKSjdHV3je9_hgsRLX2Q0jpQOVUCMYFpSRR13vKBA8QbKP64FodvhQlalepoupQaWJv9iwYF3VMVf3Anz78gqqvm__gv87fg8KHTQ</recordid><startdate>20190204</startdate><enddate>20190204</enddate><creator>Wei, Tian-Ran</creator><creator>Hu, Ping</creator><creator>Chen, Hongyi</creator><creator>Zhao, Kunpeng</creator><creator>Qiu, Pengfei</creator><creator>Shi, Xun</creator><creator>Chen, Lidong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8086-6407</orcidid><orcidid>https://orcid.org/0000-0002-9977-3139</orcidid><orcidid>https://orcid.org/0000-0002-5011-0932</orcidid></search><sort><creationdate>20190204</creationdate><title>Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties</title><author>Wei, Tian-Ran ; Hu, Ping ; Chen, Hongyi ; Zhao, Kunpeng ; Qiu, Pengfei ; Shi, Xun ; Chen, Lidong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-381fe5b548c31b5b75439c61ec42888bf4d755b4dc6953a22abdd7ca893631b63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Binary alloys</topic><topic>Dimensional stability</topic><topic>Electrical resistivity</topic><topic>Phase change materials</topic><topic>Polycrystals</topic><topic>Seebeck effect</topic><topic>Thermal conductivity</topic><topic>Thermoelectric materials</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wei, Tian-Ran</creatorcontrib><creatorcontrib>Hu, Ping</creatorcontrib><creatorcontrib>Chen, Hongyi</creatorcontrib><creatorcontrib>Zhao, Kunpeng</creatorcontrib><creatorcontrib>Qiu, Pengfei</creatorcontrib><creatorcontrib>Shi, Xun</creatorcontrib><creatorcontrib>Chen, Lidong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wei, Tian-Ran</au><au>Hu, Ping</au><au>Chen, Hongyi</au><au>Zhao, Kunpeng</au><au>Qiu, Pengfei</au><au>Shi, Xun</au><au>Chen, Lidong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties</atitle><jtitle>Applied physics letters</jtitle><date>2019-02-04</date><risdate>2019</risdate><volume>114</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-dimensional semiconductors in their stable trigonal phases with high electrical conductivity and low thermal conductivity, but their thermoelectric properties have not been systematically investigated. Here, in this letter, we prepared polycrystalline Ge2Sb2Te5, GeSb2Te4, and GeSb4Te7 bulk materials and studied the thermoelectric transport properties. Large anisotropy in Seebeck coefficient as well as in electrical conductivity is observed, which is not commonly reported in polycrystalline thermoelectric materials. Combining experimental study and theoretical calculations, one can find that this phenomenon is attributed to the asymmetry of a material's band structure. Maximal zT values of 0.46–0.60 are achieved at 750 K, indicating that GeSbTe-based compounds are promising thermoelectric materials for mid-temperature applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5083863</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-8086-6407</orcidid><orcidid>https://orcid.org/0000-0002-9977-3139</orcidid><orcidid>https://orcid.org/0000-0002-5011-0932</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2019-02, Vol.114 (5) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_5083863 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Anisotropy Applied physics Binary alloys Dimensional stability Electrical resistivity Phase change materials Polycrystals Seebeck effect Thermal conductivity Thermoelectric materials Transport properties |
title | Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T04%3A09%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quasi-two-dimensional%20GeSbTe%20compounds%20as%20promising%20thermoelectric%20materials%20with%20anisotropic%20transport%20properties&rft.jtitle=Applied%20physics%20letters&rft.au=Wei,%20Tian-Ran&rft.date=2019-02-04&rft.volume=114&rft.issue=5&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5083863&rft_dat=%3Cproquest_cross%3E2177357110%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2177357110&rft_id=info:pmid/&rfr_iscdi=true |