TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

The discovery of HfO2-based ferroelectric (FE) films gives FE memory devices great potential for the next-generation memory technology. In this letter, TiNx with varying nitrogen atomic contents was demonstrated as electrodes of FE Hf0.5Zr0.5O2 memory devices on quartz substrates for transparent mem...

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