TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

The discovery of HfO2-based ferroelectric (FE) films gives FE memory devices great potential for the next-generation memory technology. In this letter, TiNx with varying nitrogen atomic contents was demonstrated as electrodes of FE Hf0.5Zr0.5O2 memory devices on quartz substrates for transparent mem...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2019-02, Vol.114 (5)
Hauptverfasser: Li, Yuxing, Liang, Renrong, Xiong, Benkuan, Liu, Houfang, Zhao, Ruiting, Li, Jingzhou, Liu, Ting, Pang, Yu, Tian, He, Yang, Yi, Ren, Tian-Ling
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 5
container_start_page
container_title Applied physics letters
container_volume 114
creator Li, Yuxing
Liang, Renrong
Xiong, Benkuan
Liu, Houfang
Zhao, Ruiting
Li, Jingzhou
Liu, Ting
Pang, Yu
Tian, He
Yang, Yi
Ren, Tian-Ling
description The discovery of HfO2-based ferroelectric (FE) films gives FE memory devices great potential for the next-generation memory technology. In this letter, TiNx with varying nitrogen atomic contents was demonstrated as electrodes of FE Hf0.5Zr0.5O2 memory devices on quartz substrates for transparent memory applications. The transmittance and reflectance from 350 nm to 2500 nm of the TiNx/Hf0.5Zr0.5O2/TiNx structures generally increased and decreased, respectively. Selectivity between the visible and infrared light altered as the N content is increased. When the N2 ratio increases from 0% to 30%, the transmittance selectivity between 1064 nm (infrared) and 532 nm (green) lights increases from 79.6% to 105.3%, while the reflectance selectivity decreases from 107.9% to 48.9%. The polarization cycling performance of FE TiNx/Hf0.5Zr0.5O2/TiNx was explored up to 107 times. The devices with N-rich TiNx electrodes showed suppression of the wake-up effect during cycling. The transient current loops and atomic-fraction depth profiles of capacitors were inspected as well. The results indicated that there were fewer oxygen-vacancy defects in the as-grown N-rich devices and no influential redistribution of oxygen-vacancy defects during the cycling.
doi_str_mv 10.1063/1.5083231
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_5083231</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2176522150</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-f05160f09f59434098e07aa3931fdf811eaf9e8d2320f78f1ad8f528d48e22033</originalsourceid><addsrcrecordid>eNqd0MFKAzEQBuAgCtbqwTcIeFLYdiZpdrNHKWqFYi_14iXE3QlubXfXJGvt27ulBe9eZpjhYwZ-xq4RRgipHONIgZZC4gkbIGRZIhH1KRsAgEzSXOE5uwhh1Y9KSDlgxbJ6-RnPHIzUm-_LQoz3G-7I-4bWVERfFXxDm8bv-LaKHzx2tX1fE4_e1qG1nupix21d8tC1racQqORb-0lJ13Jyrr9wyc6cXQe6OvYhe318WE5nyXzx9Dy9nyeFUFlMHChMwUHuVD6RE8g1QWatzCW60mlEsi4nXQopwGXaoS21U0KXE01CgJRDdnO42_rmq6MQzarpfN2_NAKzVAmBCnp1e1CFb0Lw5Ezrq431O4Ng9hkaNMcMe3t3sKGooo1VU_8Pfzf-D5q2dPIXKFJ-Ww</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2176522150</pqid></control><display><type>article</type><title>TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Li, Yuxing ; Liang, Renrong ; Xiong, Benkuan ; Liu, Houfang ; Zhao, Ruiting ; Li, Jingzhou ; Liu, Ting ; Pang, Yu ; Tian, He ; Yang, Yi ; Ren, Tian-Ling</creator><creatorcontrib>Li, Yuxing ; Liang, Renrong ; Xiong, Benkuan ; Liu, Houfang ; Zhao, Ruiting ; Li, Jingzhou ; Liu, Ting ; Pang, Yu ; Tian, He ; Yang, Yi ; Ren, Tian-Ling</creatorcontrib><description>The discovery of HfO2-based ferroelectric (FE) films gives FE memory devices great potential for the next-generation memory technology. In this letter, TiNx with varying nitrogen atomic contents was demonstrated as electrodes of FE Hf0.5Zr0.5O2 memory devices on quartz substrates for transparent memory applications. The transmittance and reflectance from 350 nm to 2500 nm of the TiNx/Hf0.5Zr0.5O2/TiNx structures generally increased and decreased, respectively. Selectivity between the visible and infrared light altered as the N content is increased. When the N2 ratio increases from 0% to 30%, the transmittance selectivity between 1064 nm (infrared) and 532 nm (green) lights increases from 79.6% to 105.3%, while the reflectance selectivity decreases from 107.9% to 48.9%. The polarization cycling performance of FE TiNx/Hf0.5Zr0.5O2/TiNx was explored up to 107 times. The devices with N-rich TiNx electrodes showed suppression of the wake-up effect during cycling. The transient current loops and atomic-fraction depth profiles of capacitors were inspected as well. The results indicated that there were fewer oxygen-vacancy defects in the as-grown N-rich devices and no influential redistribution of oxygen-vacancy defects during the cycling.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5083231</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Cycles ; Defects ; Electrode polarization ; Electrodes ; Ferroelectric materials ; Ferroelectricity ; Hafnium oxide ; Infrared radiation ; Memory devices ; Nitrogen ; Reflectance ; Selectivity ; Substrates ; Transient current ; Transmittance ; Vacancies</subject><ispartof>Applied physics letters, 2019-02, Vol.114 (5)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-f05160f09f59434098e07aa3931fdf811eaf9e8d2320f78f1ad8f528d48e22033</citedby><cites>FETCH-LOGICAL-c257t-f05160f09f59434098e07aa3931fdf811eaf9e8d2320f78f1ad8f528d48e22033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5083231$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Li, Yuxing</creatorcontrib><creatorcontrib>Liang, Renrong</creatorcontrib><creatorcontrib>Xiong, Benkuan</creatorcontrib><creatorcontrib>Liu, Houfang</creatorcontrib><creatorcontrib>Zhao, Ruiting</creatorcontrib><creatorcontrib>Li, Jingzhou</creatorcontrib><creatorcontrib>Liu, Ting</creatorcontrib><creatorcontrib>Pang, Yu</creatorcontrib><creatorcontrib>Tian, He</creatorcontrib><creatorcontrib>Yang, Yi</creatorcontrib><creatorcontrib>Ren, Tian-Ling</creatorcontrib><title>TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect</title><title>Applied physics letters</title><description>The discovery of HfO2-based ferroelectric (FE) films gives FE memory devices great potential for the next-generation memory technology. In this letter, TiNx with varying nitrogen atomic contents was demonstrated as electrodes of FE Hf0.5Zr0.5O2 memory devices on quartz substrates for transparent memory applications. The transmittance and reflectance from 350 nm to 2500 nm of the TiNx/Hf0.5Zr0.5O2/TiNx structures generally increased and decreased, respectively. Selectivity between the visible and infrared light altered as the N content is increased. When the N2 ratio increases from 0% to 30%, the transmittance selectivity between 1064 nm (infrared) and 532 nm (green) lights increases from 79.6% to 105.3%, while the reflectance selectivity decreases from 107.9% to 48.9%. The polarization cycling performance of FE TiNx/Hf0.5Zr0.5O2/TiNx was explored up to 107 times. The devices with N-rich TiNx electrodes showed suppression of the wake-up effect during cycling. The transient current loops and atomic-fraction depth profiles of capacitors were inspected as well. The results indicated that there were fewer oxygen-vacancy defects in the as-grown N-rich devices and no influential redistribution of oxygen-vacancy defects during the cycling.</description><subject>Applied physics</subject><subject>Cycles</subject><subject>Defects</subject><subject>Electrode polarization</subject><subject>Electrodes</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Hafnium oxide</subject><subject>Infrared radiation</subject><subject>Memory devices</subject><subject>Nitrogen</subject><subject>Reflectance</subject><subject>Selectivity</subject><subject>Substrates</subject><subject>Transient current</subject><subject>Transmittance</subject><subject>Vacancies</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqd0MFKAzEQBuAgCtbqwTcIeFLYdiZpdrNHKWqFYi_14iXE3QlubXfXJGvt27ulBe9eZpjhYwZ-xq4RRgipHONIgZZC4gkbIGRZIhH1KRsAgEzSXOE5uwhh1Y9KSDlgxbJ6-RnPHIzUm-_LQoz3G-7I-4bWVERfFXxDm8bv-LaKHzx2tX1fE4_e1qG1nupix21d8tC1racQqORb-0lJ13Jyrr9wyc6cXQe6OvYhe318WE5nyXzx9Dy9nyeFUFlMHChMwUHuVD6RE8g1QWatzCW60mlEsi4nXQopwGXaoS21U0KXE01CgJRDdnO42_rmq6MQzarpfN2_NAKzVAmBCnp1e1CFb0Lw5Ezrq431O4Ng9hkaNMcMe3t3sKGooo1VU_8Pfzf-D5q2dPIXKFJ-Ww</recordid><startdate>20190204</startdate><enddate>20190204</enddate><creator>Li, Yuxing</creator><creator>Liang, Renrong</creator><creator>Xiong, Benkuan</creator><creator>Liu, Houfang</creator><creator>Zhao, Ruiting</creator><creator>Li, Jingzhou</creator><creator>Liu, Ting</creator><creator>Pang, Yu</creator><creator>Tian, He</creator><creator>Yang, Yi</creator><creator>Ren, Tian-Ling</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190204</creationdate><title>TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect</title><author>Li, Yuxing ; Liang, Renrong ; Xiong, Benkuan ; Liu, Houfang ; Zhao, Ruiting ; Li, Jingzhou ; Liu, Ting ; Pang, Yu ; Tian, He ; Yang, Yi ; Ren, Tian-Ling</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-f05160f09f59434098e07aa3931fdf811eaf9e8d2320f78f1ad8f528d48e22033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Cycles</topic><topic>Defects</topic><topic>Electrode polarization</topic><topic>Electrodes</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Hafnium oxide</topic><topic>Infrared radiation</topic><topic>Memory devices</topic><topic>Nitrogen</topic><topic>Reflectance</topic><topic>Selectivity</topic><topic>Substrates</topic><topic>Transient current</topic><topic>Transmittance</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yuxing</creatorcontrib><creatorcontrib>Liang, Renrong</creatorcontrib><creatorcontrib>Xiong, Benkuan</creatorcontrib><creatorcontrib>Liu, Houfang</creatorcontrib><creatorcontrib>Zhao, Ruiting</creatorcontrib><creatorcontrib>Li, Jingzhou</creatorcontrib><creatorcontrib>Liu, Ting</creatorcontrib><creatorcontrib>Pang, Yu</creatorcontrib><creatorcontrib>Tian, He</creatorcontrib><creatorcontrib>Yang, Yi</creatorcontrib><creatorcontrib>Ren, Tian-Ling</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yuxing</au><au>Liang, Renrong</au><au>Xiong, Benkuan</au><au>Liu, Houfang</au><au>Zhao, Ruiting</au><au>Li, Jingzhou</au><au>Liu, Ting</au><au>Pang, Yu</au><au>Tian, He</au><au>Yang, Yi</au><au>Ren, Tian-Ling</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect</atitle><jtitle>Applied physics letters</jtitle><date>2019-02-04</date><risdate>2019</risdate><volume>114</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The discovery of HfO2-based ferroelectric (FE) films gives FE memory devices great potential for the next-generation memory technology. In this letter, TiNx with varying nitrogen atomic contents was demonstrated as electrodes of FE Hf0.5Zr0.5O2 memory devices on quartz substrates for transparent memory applications. The transmittance and reflectance from 350 nm to 2500 nm of the TiNx/Hf0.5Zr0.5O2/TiNx structures generally increased and decreased, respectively. Selectivity between the visible and infrared light altered as the N content is increased. When the N2 ratio increases from 0% to 30%, the transmittance selectivity between 1064 nm (infrared) and 532 nm (green) lights increases from 79.6% to 105.3%, while the reflectance selectivity decreases from 107.9% to 48.9%. The polarization cycling performance of FE TiNx/Hf0.5Zr0.5O2/TiNx was explored up to 107 times. The devices with N-rich TiNx electrodes showed suppression of the wake-up effect during cycling. The transient current loops and atomic-fraction depth profiles of capacitors were inspected as well. The results indicated that there were fewer oxygen-vacancy defects in the as-grown N-rich devices and no influential redistribution of oxygen-vacancy defects during the cycling.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5083231</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2019-02, Vol.114 (5)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_5083231
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Cycles
Defects
Electrode polarization
Electrodes
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Infrared radiation
Memory devices
Nitrogen
Reflectance
Selectivity
Substrates
Transient current
Transmittance
Vacancies
title TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T19%3A35%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=TiNx/Hf0.5Zr0.5O2/TiNx%20ferroelectric%20memory%20with%20tunable%20transparency%20and%20suppressed%20wake-up%20effect&rft.jtitle=Applied%20physics%20letters&rft.au=Li,%20Yuxing&rft.date=2019-02-04&rft.volume=114&rft.issue=5&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5083231&rft_dat=%3Cproquest_cross%3E2176522150%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2176522150&rft_id=info:pmid/&rfr_iscdi=true