Fowler-Nordheim tunneling characteristics of graphene/hBN/metal heterojunctions

The heterostructures of low-dimensional materials are considered promising candidates for future electronic devices. In this work, we manifest the interlayer hexagonal boron nitride (hBN) thickness dependent tunneling characteristics of graphene/hBN/metal heterojunction back-gated field effect trans...

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Veröffentlicht in:	Journal of applied physics 2019-02, Vol.125 (8)
Hauptverfasser:	Iqbal, Muhammad Zahir, Faisal, Mian Muhammad
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bias Boron nitride Current carriers Electronic devices Field effect transistors Film thickness Graphene Heterojunctions Heterostructures Interlayers Semiconductor devices Threshold voltage
Online-Zugang:	Volltext
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