MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

In this work, we report record electron mobility values in unintentionally doped β-Ga2O3 films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped regrown n+ β-Ga2O3 contact layers, we were able to maintain Ohmic contact to the β-Ga2O3 films down to 40 K, allowing for relia...

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Veröffentlicht in:	APL materials 2019-02, Vol.7 (2), p.022506-022506-6
Hauptverfasser:	Zhang, Yuewei, Alema, Fikadu, Mauze, Akhil, Koksaldi, Onur S., Miller, Ross, Osinsky, Andrei, Speck, James S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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