1D ballistic transport channel probed by invasive and non-invasive contacts

Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage pr...

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Veröffentlicht in:Applied physics letters 2018-11, Vol.113 (19)
Hauptverfasser: Aprojanz, Johannes, Miccoli, Ilio, Baringhaus, Jens, Tegenkamp, Christoph
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container_title Applied physics letters
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creator Aprojanz, Johannes
Miccoli, Ilio
Baringhaus, Jens
Tegenkamp, Christoph
description Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_5054393</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2130159943</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-2cf5db0f2a7e6773fc231c1c73fce709a4e748f9b8a2e2eb672d99627043bc4a3</originalsourceid><addsrcrecordid>eNp90EtLAzEQAOAgCtbqwX8Q8KSwNZPsbpqj1CcWvOg5ZLMJpqzJmqQL_fduaakHwdM8-JgZBqFLIDMgNbuFWUWqkgl2hCZAOC8YwPwYTQghrKhFBafoLKXVWFaUsQl6hXvcqK5zKTuNc1Q-9SFmrD-V96bDfQyNaXGzwc4PKrnBYOVb7IMvDg0dfFY6p3N0YlWXzMU-TtHH48P74rlYvj29LO6WhWaU54JqW7UNsVRxU3POrKYMNOhtZjgRqjS8nFvRzBU11DQ1p60QNeWkZI0uFZuiq93c8bjvtUlZrsI6-nGlpMAIVEKUbFTXO6VjSCkaK_vovlTcSCBy-ysJcv-r0d7sbNIuq-yCP-AhxF8o-9b-h_9O_gEaOHd8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2130159943</pqid></control><display><type>article</type><title>1D ballistic transport channel probed by invasive and non-invasive contacts</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Aprojanz, Johannes ; Miccoli, Ilio ; Baringhaus, Jens ; Tegenkamp, Christoph</creator><creatorcontrib>Aprojanz, Johannes ; Miccoli, Ilio ; Baringhaus, Jens ; Tegenkamp, Christoph</creatorcontrib><description>Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5054393</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Contact resistance ; Electric potential ; Epitaxial growth ; Graphene ; Resistance ; Transport</subject><ispartof>Applied physics letters, 2018-11, Vol.113 (19)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-2cf5db0f2a7e6773fc231c1c73fce709a4e748f9b8a2e2eb672d99627043bc4a3</citedby><cites>FETCH-LOGICAL-c327t-2cf5db0f2a7e6773fc231c1c73fce709a4e748f9b8a2e2eb672d99627043bc4a3</cites><orcidid>0000-0003-0453-0765</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5054393$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,781,791,4498,27905,27906,76133</link.rule.ids></links><search><creatorcontrib>Aprojanz, Johannes</creatorcontrib><creatorcontrib>Miccoli, Ilio</creatorcontrib><creatorcontrib>Baringhaus, Jens</creatorcontrib><creatorcontrib>Tegenkamp, Christoph</creatorcontrib><title>1D ballistic transport channel probed by invasive and non-invasive contacts</title><title>Applied physics letters</title><description>Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.</description><subject>Applied physics</subject><subject>Contact resistance</subject><subject>Electric potential</subject><subject>Epitaxial growth</subject><subject>Graphene</subject><subject>Resistance</subject><subject>Transport</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90EtLAzEQAOAgCtbqwX8Q8KSwNZPsbpqj1CcWvOg5ZLMJpqzJmqQL_fduaakHwdM8-JgZBqFLIDMgNbuFWUWqkgl2hCZAOC8YwPwYTQghrKhFBafoLKXVWFaUsQl6hXvcqK5zKTuNc1Q-9SFmrD-V96bDfQyNaXGzwc4PKrnBYOVb7IMvDg0dfFY6p3N0YlWXzMU-TtHH48P74rlYvj29LO6WhWaU54JqW7UNsVRxU3POrKYMNOhtZjgRqjS8nFvRzBU11DQ1p60QNeWkZI0uFZuiq93c8bjvtUlZrsI6-nGlpMAIVEKUbFTXO6VjSCkaK_vovlTcSCBy-ysJcv-r0d7sbNIuq-yCP-AhxF8o-9b-h_9O_gEaOHd8</recordid><startdate>20181105</startdate><enddate>20181105</enddate><creator>Aprojanz, Johannes</creator><creator>Miccoli, Ilio</creator><creator>Baringhaus, Jens</creator><creator>Tegenkamp, Christoph</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0453-0765</orcidid></search><sort><creationdate>20181105</creationdate><title>1D ballistic transport channel probed by invasive and non-invasive contacts</title><author>Aprojanz, Johannes ; Miccoli, Ilio ; Baringhaus, Jens ; Tegenkamp, Christoph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-2cf5db0f2a7e6773fc231c1c73fce709a4e748f9b8a2e2eb672d99627043bc4a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Contact resistance</topic><topic>Electric potential</topic><topic>Epitaxial growth</topic><topic>Graphene</topic><topic>Resistance</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aprojanz, Johannes</creatorcontrib><creatorcontrib>Miccoli, Ilio</creatorcontrib><creatorcontrib>Baringhaus, Jens</creatorcontrib><creatorcontrib>Tegenkamp, Christoph</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aprojanz, Johannes</au><au>Miccoli, Ilio</au><au>Baringhaus, Jens</au><au>Tegenkamp, Christoph</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1D ballistic transport channel probed by invasive and non-invasive contacts</atitle><jtitle>Applied physics letters</jtitle><date>2018-11-05</date><risdate>2018</risdate><volume>113</volume><issue>19</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5054393</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0453-0765</orcidid></addata></record>
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subjects Applied physics
Contact resistance
Electric potential
Epitaxial growth
Graphene
Resistance
Transport
title 1D ballistic transport channel probed by invasive and non-invasive contacts
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T15%3A02%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=1D%20ballistic%20transport%20channel%20probed%20by%20invasive%20and%20non-invasive%20contacts&rft.jtitle=Applied%20physics%20letters&rft.au=Aprojanz,%20Johannes&rft.date=2018-11-05&rft.volume=113&rft.issue=19&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5054393&rft_dat=%3Cproquest_cross%3E2130159943%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2130159943&rft_id=info:pmid/&rfr_iscdi=true