1D ballistic transport channel probed by invasive and non-invasive contacts
Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage pr...
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Veröffentlicht in: | Applied physics letters 2018-11, Vol.113 (19) |
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creator | Aprojanz, Johannes Miccoli, Ilio Baringhaus, Jens Tegenkamp, Christoph |
description | Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures. |
doi_str_mv | 10.1063/1.5054393 |
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By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.</description><subject>Applied physics</subject><subject>Contact resistance</subject><subject>Electric potential</subject><subject>Epitaxial growth</subject><subject>Graphene</subject><subject>Resistance</subject><subject>Transport</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90EtLAzEQAOAgCtbqwX8Q8KSwNZPsbpqj1CcWvOg5ZLMJpqzJmqQL_fduaakHwdM8-JgZBqFLIDMgNbuFWUWqkgl2hCZAOC8YwPwYTQghrKhFBafoLKXVWFaUsQl6hXvcqK5zKTuNc1Q-9SFmrD-V96bDfQyNaXGzwc4PKrnBYOVb7IMvDg0dfFY6p3N0YlWXzMU-TtHH48P74rlYvj29LO6WhWaU54JqW7UNsVRxU3POrKYMNOhtZjgRqjS8nFvRzBU11DQ1p60QNeWkZI0uFZuiq93c8bjvtUlZrsI6-nGlpMAIVEKUbFTXO6VjSCkaK_vovlTcSCBy-ysJcv-r0d7sbNIuq-yCP-AhxF8o-9b-h_9O_gEaOHd8</recordid><startdate>20181105</startdate><enddate>20181105</enddate><creator>Aprojanz, Johannes</creator><creator>Miccoli, Ilio</creator><creator>Baringhaus, Jens</creator><creator>Tegenkamp, Christoph</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0453-0765</orcidid></search><sort><creationdate>20181105</creationdate><title>1D ballistic transport channel probed by invasive and non-invasive contacts</title><author>Aprojanz, Johannes ; Miccoli, Ilio ; Baringhaus, Jens ; Tegenkamp, Christoph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-2cf5db0f2a7e6773fc231c1c73fce709a4e748f9b8a2e2eb672d99627043bc4a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Contact resistance</topic><topic>Electric potential</topic><topic>Epitaxial growth</topic><topic>Graphene</topic><topic>Resistance</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aprojanz, Johannes</creatorcontrib><creatorcontrib>Miccoli, Ilio</creatorcontrib><creatorcontrib>Baringhaus, Jens</creatorcontrib><creatorcontrib>Tegenkamp, Christoph</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aprojanz, Johannes</au><au>Miccoli, Ilio</au><au>Baringhaus, Jens</au><au>Tegenkamp, Christoph</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1D ballistic transport channel probed by invasive and non-invasive contacts</atitle><jtitle>Applied physics letters</jtitle><date>2018-11-05</date><risdate>2018</risdate><volume>113</volume><issue>19</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5054393</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0453-0765</orcidid></addata></record> |
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subjects | Applied physics Contact resistance Electric potential Epitaxial growth Graphene Resistance Transport |
title | 1D ballistic transport channel probed by invasive and non-invasive contacts |
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