Proton irradiation induced defects in β-Ga2O3: A combined EPR and theory study

Proton irradiation of both n-type and semi-insulating bulk samples of β-Ga2O3 leads to the formation of two paramagnetic defects with spin S = 1/2 and monoclinic point symmetry. Their high introduction rates indicate them to be primary irradiation induced defects. The first electron spin resonance (...

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Veröffentlicht in:	APL materials 2019-02, Vol.7 (2), p.022521-022521-8
Hauptverfasser:	von Bardeleben, Hans Jürgen, Zhou, Shengqiang, Gerstmann, Uwe, Skachkov, Dmitry, Lambrecht, Walter R. L., Ho, Quoc Duy, Deák, Peter
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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