Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure

We demonstrate strong, analog, reversible, and nonvolatile memcapacitance in a Si-based MOS (metal-oxide-semiconductor) memcapacitor with an ITO (In-Sn-O)/HfOx/Si structure. Both accumulation and depletion capacitances change sequentially and reversibly upon repeating voltage application with respec...

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Veröffentlicht in:	Applied physics letters 2018-10, Vol.113 (16)
Hauptverfasser:	Park, Daehoon, Yang, Paul, Kim, Hyung Jun, Beom, Keonwon, Lee, Hyun Ho, Kang, Chi Jung, Yoon, Tae-Sik
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Depletion Electric potential Metal oxide semiconductors Migration Oxygen ions Polarity Random access memory Semiconductor devices Silicon Transistors
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container_issue	16
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container_title	Applied physics letters
container_volume	113
creator	Park, Daehoon Yang, Paul Kim, Hyung Jun Beom, Keonwon Lee, Hyun Ho Kang, Chi Jung Yoon, Tae-Sik
description	We demonstrate strong, analog, reversible, and nonvolatile memcapacitance in a Si-based MOS (metal-oxide-semiconductor) memcapacitor with an ITO (In-Sn-O)/HfOx/Si structure. Both accumulation and depletion capacitances change sequentially and reversibly upon repeating voltage application with respect to voltage polarity. This memcapacitance is thought to be induced by oxygen ions' migration between ITO and HfOx layers, which changes the HfOx permittivity and the depletion states in Si and ITO. The Si-based memcapacitor has potential to be applied to the gate stack of the MOS field-effect-transistor for nonvolatile memory and synaptic transistors through modulating drain current determined by the capacitance change of the MOS gate stack.
doi_str_mv	10.1063/1.5043275
format	Article
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Both accumulation and depletion capacitances change sequentially and reversibly upon repeating voltage application with respect to voltage polarity. This memcapacitance is thought to be induced by oxygen ions' migration between ITO and HfOx layers, which changes the HfOx permittivity and the depletion states in Si and ITO. 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Both accumulation and depletion capacitances change sequentially and reversibly upon repeating voltage application with respect to voltage polarity. This memcapacitance is thought to be induced by oxygen ions' migration between ITO and HfOx layers, which changes the HfOx permittivity and the depletion states in Si and ITO. The Si-based memcapacitor has potential to be applied to the gate stack of the MOS field-effect-transistor for nonvolatile memory and synaptic transistors through modulating drain current determined by the capacitance change of the MOS gate stack.</description><subject>Applied physics</subject><subject>Depletion</subject><subject>Electric potential</subject><subject>Metal oxide semiconductors</subject><subject>Migration</subject><subject>Oxygen ions</subject><subject>Polarity</subject><subject>Random access memory</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX-w4Elh23zsV4-lqC0UerCeQ5Kd1ZTdzTbJ1vrvTWlRQfA0mfAwzLwI3RI8IjhjYzJKccJonp6hAcF5HjNCinM0wBizOJuk5BJdObcJbUoZG6DttBW1eYss7MA6LWuIWtPuTC28Du8GGiU6obQXrYJIt-HHizo2e11C7KDRyrRlr7yxv2xoPrR_jxbr1XherfbjFx05bwPrLVyji0rUDm5OdYhenx7Xs3m8XD0vZtNlrML6PmYqkRQUKJrJPMVKFYBLJTMl01RIQZOyrEpZUBAZkEqQHGMlCwElSwpFJjkborvj3M6abQ_O843pbbjWcUooIcHgSVD3R6Wscc5CxTurG2E_OcH8kCgn_JRosA9H6w55eG3ab7wz9gfyrqz-w38nfwFHYIel</recordid><startdate>20181015</startdate><enddate>20181015</enddate><creator>Park, Daehoon</creator><creator>Yang, Paul</creator><creator>Kim, Hyung Jun</creator><creator>Beom, Keonwon</creator><creator>Lee, Hyun Ho</creator><creator>Kang, Chi Jung</creator><creator>Yoon, Tae-Sik</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3935-5437</orcidid><orcidid>https://orcid.org/0000-0003-3244-5795</orcidid><orcidid>https://orcid.org/0000-0002-5390-1238</orcidid><orcidid>https://orcid.org/0000-0003-1861-3537</orcidid></search><sort><creationdate>20181015</creationdate><title>Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure</title><author>Park, Daehoon ; Yang, Paul ; Kim, Hyung Jun ; Beom, Keonwon ; Lee, Hyun Ho ; Kang, Chi Jung ; Yoon, Tae-Sik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-3c4b2ecec26b750cc8e0dcb6cb55aba24ddfdb82ea6e1fa1700cb8aed348c1973</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Depletion</topic><topic>Electric potential</topic><topic>Metal oxide semiconductors</topic><topic>Migration</topic><topic>Oxygen ions</topic><topic>Polarity</topic><topic>Random access memory</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Daehoon</creatorcontrib><creatorcontrib>Yang, Paul</creatorcontrib><creatorcontrib>Kim, Hyung Jun</creatorcontrib><creatorcontrib>Beom, Keonwon</creatorcontrib><creatorcontrib>Lee, Hyun Ho</creatorcontrib><creatorcontrib>Kang, Chi Jung</creatorcontrib><creatorcontrib>Yoon, Tae-Sik</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Daehoon</au><au>Yang, Paul</au><au>Kim, Hyung Jun</au><au>Beom, Keonwon</au><au>Lee, Hyun Ho</au><au>Kang, Chi Jung</au><au>Yoon, Tae-Sik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure</atitle><jtitle>Applied physics letters</jtitle><date>2018-10-15</date><risdate>2018</risdate><volume>113</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate strong, analog, reversible, and nonvolatile memcapacitance in a Si-based MOS (metal-oxide-semiconductor) memcapacitor with an ITO (In-Sn-O)/HfOx/Si structure. Both accumulation and depletion capacitances change sequentially and reversibly upon repeating voltage application with respect to voltage polarity. This memcapacitance is thought to be induced by oxygen ions' migration between ITO and HfOx layers, which changes the HfOx permittivity and the depletion states in Si and ITO. The Si-based memcapacitor has potential to be applied to the gate stack of the MOS field-effect-transistor for nonvolatile memory and synaptic transistors through modulating drain current determined by the capacitance change of the MOS gate stack.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5043275</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-3935-5437</orcidid><orcidid>https://orcid.org/0000-0003-3244-5795</orcidid><orcidid>https://orcid.org/0000-0002-5390-1238</orcidid><orcidid>https://orcid.org/0000-0003-1861-3537</orcidid></addata></record>
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subjects	Applied physics Depletion Electric potential Metal oxide semiconductors Migration Oxygen ions Polarity Random access memory Semiconductor devices Silicon Transistors
title	Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure
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