Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals

Past research has shown that indirect excitation of Er3+ ions in SiO2 solid-state matrix with Si nanocrystals can be achieved by different pathways. Here, we investigate the impact excitation mechanisms in detail by means of time-resolved photoluminescence spectroscopy. We explicitly demonstrate tha...

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Veröffentlicht in:	Applied physics letters 2018-07, Vol.113 (3)
Hauptverfasser:	Lesage, A., Timmerman, D., Lebrun, D. M., Fujiwara, Y., Gregorkiewicz, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied physics Augers Excitation Nanocrystals Optical pumping Photoluminescence Photons Silicon dioxide
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description	Past research has shown that indirect excitation of Er3+ ions in SiO2 solid-state matrix with Si nanocrystals can be achieved by different pathways. Here, we investigate the impact excitation mechanisms in detail by means of time-resolved photoluminescence spectroscopy. We explicitly demonstrate that the free carrier impact excitation mechanism is activated as soon as the carriers obtain sufficient excess energy. The “hot” carriers with the above-threshold energy can be created upon optical pumping in two ways: either upon absorption of (i) a single photon with an energy exceeding a certain threshold hν > Eth or (ii) following absorption of multiple photons of lower energy in a single nanocrystal, hν
doi_str_mv	10.1063/1.5042013
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subjects	Absorption Applied physics Augers Excitation Nanocrystals Optical pumping Photoluminescence Photons Silicon dioxide
title	Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals
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