Probing of quantum energy levels in nanoscale body SOI-MOSFET: Experimental and simulation results

In the efforts to address the need for developing ultra-fast computers based on combined electronic and optical signal processing using silicon-based nanoscale devices, new types of transistors have been developed. Ultra-Thin Body and Nano-Scale Body (NSB) Silicon-On-Insulator Metal–Oxide-Semiconduc...

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Veröffentlicht in:	Journal of applied physics 2018-09, Vol.124 (12)
Hauptverfasser:	Bendayan, M., Mandelbaum, Y., Teller, G., Chelly, A., Karsenty, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Computer simulation Energy levels MOSFETs Nanotechnology devices Optical communication Quantum wells Semiconductor devices Signal processing Silicon Silicon wafers SOI (semiconductors) Transistors
Online-Zugang:	Volltext
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