High anisotropy on epitaxial C-doped Mn5Ge3 thin films grown on Ge(001)
Epitaxial Mn5Ge3C0.6 thin films were grown on Ge(001) substrates by magnetron sputtering utilizing the reactive deposition epitaxy method at 623 K. The c-axis of the hexagonal crystalline structure of Mn5Ge3 lies in the film plane with the epitaxial relationship Ge(001)[110]∥Mn5Ge3(012)[011]. The fi...
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| Veröffentlicht in: | Applied physics letters 2018-09, Vol.113 (11) |
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| container_title | Applied physics letters |
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| creator | Olive-Méndez, Sion F. López Antón, Ricardo Ponce-Ruiz, Jesús L. A. Holguín-Momaca, José T. |
| description | Epitaxial Mn5Ge3C0.6 thin films were grown on Ge(001) substrates by magnetron sputtering utilizing the reactive deposition epitaxy method at 623 K. The c-axis of the hexagonal crystalline structure of Mn5Ge3 lies in the film plane with the epitaxial relationship Ge(001)[110]∥Mn5Ge3(012)[011]. The film exhibits a large in-plane magnetic anisotropy ten times larger than that observed on Mn5Ge3C0.6 thin films grown on Ge(111) substrates attributed to the double contribution of magnetocrystalline and shape anisotropies. The magnetization M-H curves indicate that the easy magnetization axes lie in the film plane independent of the selected azimuthal, while the normal to the film plane is a hard axis. The films exhibit a ferromagnetic behavior with a Curie temperature of 425 K. Epitaxial Ge(001)/Mn5Ge3C0.6 is therefore proposed as a promising functional material for spintronic applications, which could be directly integrated into the Si technology. |
| doi_str_mv | 10.1063/1.5039666 |
| format | Article |
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A. ; Holguín-Momaca, José T.</creator><creatorcontrib>Olive-Méndez, Sion F. ; López Antón, Ricardo ; Ponce-Ruiz, Jesús L. A. ; Holguín-Momaca, José T.</creatorcontrib><description>Epitaxial Mn5Ge3C0.6 thin films were grown on Ge(001) substrates by magnetron sputtering utilizing the reactive deposition epitaxy method at 623 K. The c-axis of the hexagonal crystalline structure of Mn5Ge3 lies in the film plane with the epitaxial relationship Ge(001)[110]∥Mn5Ge3(012)[011]. The film exhibits a large in-plane magnetic anisotropy ten times larger than that observed on Mn5Ge3C0.6 thin films grown on Ge(111) substrates attributed to the double contribution of magnetocrystalline and shape anisotropies. The magnetization M-H curves indicate that the easy magnetization axes lie in the film plane independent of the selected azimuthal, while the normal to the film plane is a hard axis. The films exhibit a ferromagnetic behavior with a Curie temperature of 425 K. Epitaxial Ge(001)/Mn5Ge3C0.6 is therefore proposed as a promising functional material for spintronic applications, which could be directly integrated into the Si technology.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5039666</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Curie temperature ; Epitaxial growth ; Ferromagnetic materials ; Germanides ; Magnetic anisotropy ; Magnetism ; Magnetization ; Magnetron sputtering ; Manganese compounds ; Substrates ; Thin films</subject><ispartof>Applied physics letters, 2018-09, Vol.113 (11)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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Epitaxial Ge(001)/Mn5Ge3C0.6 is therefore proposed as a promising functional material for spintronic applications, which could be directly integrated into the Si technology.</description><subject>Applied physics</subject><subject>Curie temperature</subject><subject>Epitaxial growth</subject><subject>Ferromagnetic materials</subject><subject>Germanides</subject><subject>Magnetic anisotropy</subject><subject>Magnetism</subject><subject>Magnetization</subject><subject>Magnetron sputtering</subject><subject>Manganese compounds</subject><subject>Substrates</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90MtKAzEUBuAgCtbqwjcIuLHC1Fwmt6UUnQqKG12HaSZpU9pkTKZq394pLboQXB0OfPyH8wNwidEYI05v8ZghqjjnR2CAkRAFxVgegwFCiBZcMXwKznJe9isjlA5ANfXzBayDz7FLsd3CGKBtfVd_-XoFJ0UTW9vA58AqS2G38AE6v1pnOE_xM-xwZa8RwqNzcOLqVbYXhzkEbw_3r5Np8fRSPU7ungpDiegKzEoqGuVmxHGCECfKsNIwKYmzxM644KUxgpaMWCNrRw1SDrvSSI5mTlhMh-Bqn9um-L6xudPLuEmhP6mJlEopLOVOjfbKpJhzsk63ya_rtNUY6V1PGutDT7292dts-rc7H8MP_ojpF-q2cf_hv8nf1vtzSw</recordid><startdate>20180910</startdate><enddate>20180910</enddate><creator>Olive-Méndez, Sion F.</creator><creator>López Antón, Ricardo</creator><creator>Ponce-Ruiz, Jesús L. 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A.</creatorcontrib><creatorcontrib>Holguín-Momaca, José T.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Olive-Méndez, Sion F.</au><au>López Antón, Ricardo</au><au>Ponce-Ruiz, Jesús L. A.</au><au>Holguín-Momaca, José T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High anisotropy on epitaxial C-doped Mn5Ge3 thin films grown on Ge(001)</atitle><jtitle>Applied physics letters</jtitle><date>2018-09-10</date><risdate>2018</risdate><volume>113</volume><issue>11</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Epitaxial Mn5Ge3C0.6 thin films were grown on Ge(001) substrates by magnetron sputtering utilizing the reactive deposition epitaxy method at 623 K. The c-axis of the hexagonal crystalline structure of Mn5Ge3 lies in the film plane with the epitaxial relationship Ge(001)[110]∥Mn5Ge3(012)[011]. The film exhibits a large in-plane magnetic anisotropy ten times larger than that observed on Mn5Ge3C0.6 thin films grown on Ge(111) substrates attributed to the double contribution of magnetocrystalline and shape anisotropies. The magnetization M-H curves indicate that the easy magnetization axes lie in the film plane independent of the selected azimuthal, while the normal to the film plane is a hard axis. The films exhibit a ferromagnetic behavior with a Curie temperature of 425 K. Epitaxial Ge(001)/Mn5Ge3C0.6 is therefore proposed as a promising functional material for spintronic applications, which could be directly integrated into the Si technology.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5039666</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-5958-0634</orcidid><orcidid>https://orcid.org/0000-0002-3123-1245</orcidid><orcidid>https://orcid.org/0000-0002-1541-0331</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Curie temperature Epitaxial growth Ferromagnetic materials Germanides Magnetic anisotropy Magnetism Magnetization Magnetron sputtering Manganese compounds Substrates Thin films |
| title | High anisotropy on epitaxial C-doped Mn5Ge3 thin films grown on Ge(001) |
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