Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

The relationship between substrate hole currents and interface state generation in Al2O3/InGaAs n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is experimentally studied for the MOSFETs with three different Al2O3 thicknesses of 3.2, 5.2, and 8.2 nm. The constant positive gate...

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Veröffentlicht in:	Journal of applied physics 2018-06, Vol.123 (23)
Hauptverfasser:	Yoon, S.-H., Ahn, D.-H., Takenaka, M., Takagi, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied physics Current carriers Field effect transistors Fluence Indium gallium arsenides MOSFETs Semiconductor devices Silicon dioxide Substrates
Online-Zugang:	Volltext
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