Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals
The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2–4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband tra...
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| Veröffentlicht in: | Applied physics letters 2018-04, Vol.112 (16) |
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| container_title | Applied physics letters |
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| creator | Levcenko, S. Hajdeu-Chicarosh, E. Garcia-Llamas, E. Caballero, R. Serna, R. Bodnar, I. V. Victorov, I. A. Guc, M. Merino, J. M. Pérez-Rodriguez, A. Arushanov, E. León, M. |
| description | The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2–4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices. |
| doi_str_mv | 10.1063/1.5024683 |
| format | Article |
| fullrecord | <record><control><sourceid>csuc_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_5024683</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_recercat_cat_2072_357052</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-405fc8f82c898c98be911a9aa658175970a6467f141df3735197109e4b633c883</originalsourceid><addsrcrecordid>eNqdkE9LAzEUxIMoWKsHv8FeFbbmbTb_bkqxKhQ8VC9eQvqawOq2WZKssN_eLS307uExDPzmwQwht0BnQAV7gBmnVS0UOyMToFKWDECdkwmllJVCc7gkVyl9j5ZXjE3I46pzmGNIGLoGC9e2TZfC1uU4FCn3m6EIvpj31ddutVvVxbpvf4outEOJcUjZtumaXPhR3M1Rp-Rz8fwxfy2X7y9v86dliUyKXNaUe1ReVai0Qq3WTgNYba3gCiTXklpRC-mhho1nknHQEqh29VowhkqxKYHDX0w9mujQRbTZBNuczP4qKivDuNz3m5K7Y2YsmKLzpovN1sbBADX7uQyY41wje39gEzbZ5ibs_gf_hngCTTeW-QP6q3dR</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals</title><source>Recercat</source><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Levcenko, S. ; Hajdeu-Chicarosh, E. ; Garcia-Llamas, E. ; Caballero, R. ; Serna, R. ; Bodnar, I. V. ; Victorov, I. A. ; Guc, M. ; Merino, J. M. ; Pérez-Rodriguez, A. ; Arushanov, E. ; León, M.</creator><creatorcontrib>Levcenko, S. ; Hajdeu-Chicarosh, E. ; Garcia-Llamas, E. ; Caballero, R. ; Serna, R. ; Bodnar, I. V. ; Victorov, I. A. ; Guc, M. ; Merino, J. M. ; Pérez-Rodriguez, A. ; Arushanov, E. ; León, M.</creatorcontrib><description>The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2–4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5024683</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Dispositius optoelectrònics ; Ellipsometry ; El·lipsometria ; Optical properties ; Optoelectronic devices ; Propietats òptiques</subject><ispartof>Applied physics letters, 2018-04, Vol.112 (16)</ispartof><rights>Author(s)</rights><rights>(c) American Institute of Physics , 2018 info:eu-repo/semantics/openAccess</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-405fc8f82c898c98be911a9aa658175970a6467f141df3735197109e4b633c883</citedby><cites>FETCH-LOGICAL-c376t-405fc8f82c898c98be911a9aa658175970a6467f141df3735197109e4b633c883</cites><orcidid>0000-0003-0060-4843 ; 0000-0002-2072-9566 ; 0000-0002-4559-0054 ; 0000-0002-7101-3947</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5024683$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,4498,26951,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Levcenko, S.</creatorcontrib><creatorcontrib>Hajdeu-Chicarosh, E.</creatorcontrib><creatorcontrib>Garcia-Llamas, E.</creatorcontrib><creatorcontrib>Caballero, R.</creatorcontrib><creatorcontrib>Serna, R.</creatorcontrib><creatorcontrib>Bodnar, I. V.</creatorcontrib><creatorcontrib>Victorov, I. A.</creatorcontrib><creatorcontrib>Guc, M.</creatorcontrib><creatorcontrib>Merino, J. M.</creatorcontrib><creatorcontrib>Pérez-Rodriguez, A.</creatorcontrib><creatorcontrib>Arushanov, E.</creatorcontrib><creatorcontrib>León, M.</creatorcontrib><title>Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals</title><title>Applied physics letters</title><description>The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2–4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.</description><subject>Dispositius optoelectrònics</subject><subject>Ellipsometry</subject><subject>El·lipsometria</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Propietats òptiques</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>XX2</sourceid><recordid>eNqdkE9LAzEUxIMoWKsHv8FeFbbmbTb_bkqxKhQ8VC9eQvqawOq2WZKssN_eLS307uExDPzmwQwht0BnQAV7gBmnVS0UOyMToFKWDECdkwmllJVCc7gkVyl9j5ZXjE3I46pzmGNIGLoGC9e2TZfC1uU4FCn3m6EIvpj31ddutVvVxbpvf4outEOJcUjZtumaXPhR3M1Rp-Rz8fwxfy2X7y9v86dliUyKXNaUe1ReVai0Qq3WTgNYba3gCiTXklpRC-mhho1nknHQEqh29VowhkqxKYHDX0w9mujQRbTZBNuczP4qKivDuNz3m5K7Y2YsmKLzpovN1sbBADX7uQyY41wje39gEzbZ5ibs_gf_hngCTTeW-QP6q3dR</recordid><startdate>20180416</startdate><enddate>20180416</enddate><creator>Levcenko, S.</creator><creator>Hajdeu-Chicarosh, E.</creator><creator>Garcia-Llamas, E.</creator><creator>Caballero, R.</creator><creator>Serna, R.</creator><creator>Bodnar, I. V.</creator><creator>Victorov, I. A.</creator><creator>Guc, M.</creator><creator>Merino, J. M.</creator><creator>Pérez-Rodriguez, A.</creator><creator>Arushanov, E.</creator><creator>León, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>XX2</scope><orcidid>https://orcid.org/0000-0003-0060-4843</orcidid><orcidid>https://orcid.org/0000-0002-2072-9566</orcidid><orcidid>https://orcid.org/0000-0002-4559-0054</orcidid><orcidid>https://orcid.org/0000-0002-7101-3947</orcidid></search><sort><creationdate>20180416</creationdate><title>Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals</title><author>Levcenko, S. ; Hajdeu-Chicarosh, E. ; Garcia-Llamas, E. ; Caballero, R. ; Serna, R. ; Bodnar, I. V. ; Victorov, I. A. ; Guc, M. ; Merino, J. M. ; Pérez-Rodriguez, A. ; Arushanov, E. ; León, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-405fc8f82c898c98be911a9aa658175970a6467f141df3735197109e4b633c883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Dispositius optoelectrònics</topic><topic>Ellipsometry</topic><topic>El·lipsometria</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Propietats òptiques</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Levcenko, S.</creatorcontrib><creatorcontrib>Hajdeu-Chicarosh, E.</creatorcontrib><creatorcontrib>Garcia-Llamas, E.</creatorcontrib><creatorcontrib>Caballero, R.</creatorcontrib><creatorcontrib>Serna, R.</creatorcontrib><creatorcontrib>Bodnar, I. V.</creatorcontrib><creatorcontrib>Victorov, I. A.</creatorcontrib><creatorcontrib>Guc, M.</creatorcontrib><creatorcontrib>Merino, J. M.</creatorcontrib><creatorcontrib>Pérez-Rodriguez, A.</creatorcontrib><creatorcontrib>Arushanov, E.</creatorcontrib><creatorcontrib>León, M.</creatorcontrib><collection>CrossRef</collection><collection>Recercat</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Levcenko, S.</au><au>Hajdeu-Chicarosh, E.</au><au>Garcia-Llamas, E.</au><au>Caballero, R.</au><au>Serna, R.</au><au>Bodnar, I. V.</au><au>Victorov, I. A.</au><au>Guc, M.</au><au>Merino, J. M.</au><au>Pérez-Rodriguez, A.</au><au>Arushanov, E.</au><au>León, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals</atitle><jtitle>Applied physics letters</jtitle><date>2018-04-16</date><risdate>2018</risdate><volume>112</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2–4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.5024683</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0060-4843</orcidid><orcidid>https://orcid.org/0000-0002-2072-9566</orcidid><orcidid>https://orcid.org/0000-0002-4559-0054</orcidid><orcidid>https://orcid.org/0000-0002-7101-3947</orcidid><oa>free_for_read</oa></addata></record> |
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| source | Recercat; AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Dispositius optoelectrònics Ellipsometry El·lipsometria Optical properties Optoelectronic devices Propietats òptiques |
| title | Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals |
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