Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperatur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2018-03, Vol.112 (10)
Hauptverfasser:	Yao, Rihui, Zheng, Zeke, Xiong, Mei, Zhang, Xiaochen, Li, Xiaoqing, Ning, Honglong, Fang, Zhiqiang, Xie, Weiguang, Lu, Xubing, Peng, Junbiao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!