Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin

We report our findings on the optical properties of grain boundaries in GaN films grown on graphene layers and discuss their atomistic origin. We combine electron backscatter diffraction with cathodoluminescence to directly correlate the structural defects with their optical properties, enabling the...

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Veröffentlicht in:	Applied physics letters 2018-03, Vol.112 (13)
Hauptverfasser:	Yoo, Hyobin, Yoon, Sangmoon, Chung, Kunook, Kang, Seoung-Hun, Kwon, Young-Kyun, Yi, Gyu-Chul, Kim, Miyoung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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