LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstra...

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Veröffentlicht in:	Applied physics letters 2018-01, Vol.112 (5)
Hauptverfasser:	Rafique, Subrina, Karim, Md Rezaul, Johnson, Jared M., Hwang, Jinwoo, Zhao, Hongping
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Carrier transport Charge transport Chemical vapor deposition Crystal defects Current carriers Dislocations Gallium oxides Hall effect Low pressure Organic chemistry Scanning electron microscopy Scanning transmission electron microscopy Silicon Substrates Temperature dependence Thin films Transmission electron microscopy X-ray diffraction
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