High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 102...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2018-04, Vol.123 (16)
Hauptverfasser:	Pastor, David, Gandhi, Hemi H., Monmeyran, Corentin P., Akey, Austin J., Milazzo, Ruggero, Cai, Yan, Napolitani, Enrico, Gwilliam, Russell M., Crowe, Iain F., Michel, Jurgen, Kimerling, L. C., Agarwal, Anuradha, Mazur, Eric, Aziz, Michael J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!