Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication
The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization ab...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2017-11, Vol.122 (18) |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 18 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 122 |
| creator | Park, Seoung-Hwan Ahn, Doyeol Park, Chan-Yong |
| description | The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization absorption spectrum. The absorption coefficients for TE- and TM-polarizations are mainly attributed to the absorption from the ground state (m
1 = 1) because holes are mainly confined in ground states near the band-edge in an investigated range of the carrier density. We observe that a transition wavelength of 1.55 μm can be obtained for the QW structure with a relatively thin (∼16 Å) well width. Thus, we expect that a p-type WZ AlN/GaN heterostructure is applicable for a photodetector application for fiber-optic communications with normal incidence of wave. |
| doi_str_mv | 10.1063/1.5003837 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_5003837</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2116024893</sourcerecordid><originalsourceid>FETCH-LOGICAL-c393t-e216439f071cb759a21eb17fa4a4515e942ae13722abeab68a56e8dcab641b9c3</originalsourceid><addsrcrecordid>eNp90E1LAzEQBuAgCtbqwX8Q8KSwNpPsV46laC2UetFzSNIEtuxutknWUn-9W1v0IHiaOTzzDjMI3QJ5BJKzCTxmhLCSFWdoBKTkSZFl5ByNCKGQlLzgl-gqhA0hACXjI6QWbTQ-9ErJdo2lCs53sXItdhZ3Sdx3Bu96Hz-raPBcribTeoW3vWxj3-CdqWtsnce2UsYnbhjUAUdTG-2apm8rLQ9R1-jCyjqYm1Mdo_fnp7fZS7J8nS9m02WiGWcxMRTylHFLCtCqyLikYBQUVqYyzSAzPKXSACsolcpIlZcyy0251kObguKajdHdMbfzbtubEMXG9b4dVgoKkBOalpwN6v6otHcheGNF56tG-r0AIg4vFCBOLxzsw9EGXcXvW37wh_O_UHRr-x_-m_wFwv6Afw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2116024893</pqid></control><display><type>article</type><title>Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Park, Seoung-Hwan ; Ahn, Doyeol ; Park, Chan-Yong</creator><creatorcontrib>Park, Seoung-Hwan ; Ahn, Doyeol ; Park, Chan-Yong</creatorcontrib><description>The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization absorption spectrum. The absorption coefficients for TE- and TM-polarizations are mainly attributed to the absorption from the ground state (m
1 = 1) because holes are mainly confined in ground states near the band-edge in an investigated range of the carrier density. We observe that a transition wavelength of 1.55 μm can be obtained for the QW structure with a relatively thin (∼16 Å) well width. Thus, we expect that a p-type WZ AlN/GaN heterostructure is applicable for a photodetector application for fiber-optic communications with normal incidence of wave.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5003837</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorption spectra ; Absorptivity ; Aluminum nitride ; Applied physics ; Carrier density ; Fiber optics ; Gallium nitrides ; Ground state ; Heterostructures ; Optical fibers ; Polarization ; Quantum wells ; Substrates ; Wurtzite</subject><ispartof>Journal of applied physics, 2017-11, Vol.122 (18)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-e216439f071cb759a21eb17fa4a4515e942ae13722abeab68a56e8dcab641b9c3</citedby><cites>FETCH-LOGICAL-c393t-e216439f071cb759a21eb17fa4a4515e942ae13722abeab68a56e8dcab641b9c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5003837$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Park, Seoung-Hwan</creatorcontrib><creatorcontrib>Ahn, Doyeol</creatorcontrib><creatorcontrib>Park, Chan-Yong</creatorcontrib><title>Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication</title><title>Journal of applied physics</title><description>The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization absorption spectrum. The absorption coefficients for TE- and TM-polarizations are mainly attributed to the absorption from the ground state (m
1 = 1) because holes are mainly confined in ground states near the band-edge in an investigated range of the carrier density. We observe that a transition wavelength of 1.55 μm can be obtained for the QW structure with a relatively thin (∼16 Å) well width. Thus, we expect that a p-type WZ AlN/GaN heterostructure is applicable for a photodetector application for fiber-optic communications with normal incidence of wave.</description><subject>Absorption spectra</subject><subject>Absorptivity</subject><subject>Aluminum nitride</subject><subject>Applied physics</subject><subject>Carrier density</subject><subject>Fiber optics</subject><subject>Gallium nitrides</subject><subject>Ground state</subject><subject>Heterostructures</subject><subject>Optical fibers</subject><subject>Polarization</subject><subject>Quantum wells</subject><subject>Substrates</subject><subject>Wurtzite</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX8Q8KSwNpPsV46laC2UetFzSNIEtuxutknWUn-9W1v0IHiaOTzzDjMI3QJ5BJKzCTxmhLCSFWdoBKTkSZFl5ByNCKGQlLzgl-gqhA0hACXjI6QWbTQ-9ErJdo2lCs53sXItdhZ3Sdx3Bu96Hz-raPBcribTeoW3vWxj3-CdqWtsnce2UsYnbhjUAUdTG-2apm8rLQ9R1-jCyjqYm1Mdo_fnp7fZS7J8nS9m02WiGWcxMRTylHFLCtCqyLikYBQUVqYyzSAzPKXSACsolcpIlZcyy0251kObguKajdHdMbfzbtubEMXG9b4dVgoKkBOalpwN6v6otHcheGNF56tG-r0AIg4vFCBOLxzsw9EGXcXvW37wh_O_UHRr-x_-m_wFwv6Afw</recordid><startdate>20171114</startdate><enddate>20171114</enddate><creator>Park, Seoung-Hwan</creator><creator>Ahn, Doyeol</creator><creator>Park, Chan-Yong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20171114</creationdate><title>Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication</title><author>Park, Seoung-Hwan ; Ahn, Doyeol ; Park, Chan-Yong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-e216439f071cb759a21eb17fa4a4515e942ae13722abeab68a56e8dcab641b9c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Absorption spectra</topic><topic>Absorptivity</topic><topic>Aluminum nitride</topic><topic>Applied physics</topic><topic>Carrier density</topic><topic>Fiber optics</topic><topic>Gallium nitrides</topic><topic>Ground state</topic><topic>Heterostructures</topic><topic>Optical fibers</topic><topic>Polarization</topic><topic>Quantum wells</topic><topic>Substrates</topic><topic>Wurtzite</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Seoung-Hwan</creatorcontrib><creatorcontrib>Ahn, Doyeol</creatorcontrib><creatorcontrib>Park, Chan-Yong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Seoung-Hwan</au><au>Ahn, Doyeol</au><au>Park, Chan-Yong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication</atitle><jtitle>Journal of applied physics</jtitle><date>2017-11-14</date><risdate>2017</risdate><volume>122</volume><issue>18</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization absorption spectrum. The absorption coefficients for TE- and TM-polarizations are mainly attributed to the absorption from the ground state (m
1 = 1) because holes are mainly confined in ground states near the band-edge in an investigated range of the carrier density. We observe that a transition wavelength of 1.55 μm can be obtained for the QW structure with a relatively thin (∼16 Å) well width. Thus, we expect that a p-type WZ AlN/GaN heterostructure is applicable for a photodetector application for fiber-optic communications with normal incidence of wave.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5003837</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2017-11, Vol.122 (18) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_5003837 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Absorption spectra Absorptivity Aluminum nitride Applied physics Carrier density Fiber optics Gallium nitrides Ground state Heterostructures Optical fibers Polarization Quantum wells Substrates Wurtzite |
| title | Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T13%3A11%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Intersubband%20absorption%20of%20p-type%20wurtzite%20GaN/AlN%20quantum%20well%20for%20fiber-optics%20telecommunication&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Park,%20Seoung-Hwan&rft.date=2017-11-14&rft.volume=122&rft.issue=18&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5003837&rft_dat=%3Cproquest_cross%3E2116024893%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2116024893&rft_id=info:pmid/&rfr_iscdi=true |