Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography

InGaAs-camera based heterodyne lock-in carrierography (HeLIC) is developed for surface recombination velocity (SRV) imaging characterization of bare (oxide-free) hydrogen passivated Si wafer surfaces. Samples prepared using four different hydrofluoric special-solution etching conditions were tested,...

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Veröffentlicht in:Applied physics letters 2018-01, Vol.112 (1)
Hauptverfasser: Sun, Qiming, Melnikov, Alexander, Mandelis, Andreas, Pagliaro, Robert H.
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Sprache:eng
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