Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application
A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated...
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| Veröffentlicht in: | Applied physics letters 2017-11, Vol.111 (20) |
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| container_title | Applied physics letters |
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| creator | Ji, Hao Wei, Yehui Zhang, Xinlei Jiang, Ran |
| description | A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications. |
| doi_str_mv | 10.1063/1.4998207 |
| format | Article |
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All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. 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All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.</description><subject>Aluminum oxide</subject><subject>Applied physics</subject><subject>Deposition</subject><subject>Flash memory (computers)</subject><subject>Gallium</subject><subject>Indium gallium zinc oxide</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>Transistors</subject><subject>Trapping</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0MFKAzEQBuAgCtbqwTcIeFJITZpNtnssVdtCaS968RKySVZTs5s1yRb79q624N3LDAMfM8wPwDXBI4I5vSejrCgmY5yfgAHBeY4oIZNTMMAYU8QLRs7BRYzbfmRjSgegXPjav5nG-C4i_2W1gTFJ9QFtA5fz1w1M77ZBlXU1TEE20cbkQ4SVD7DuXLLImZ1xSBnn4Hq6foC1qX3YQ9m2ziqZrG8uwVklXTRXxz4EL0-Pz7MFWm3my9l0hRQtaEKaG2q0KjLNtMmUzHKdU677QnOiS5rrgquyJKogWcWU0sawCctJVjJWKUnpENwc9rbBf3YmJrH1XWj6k2JMCMdjRjnv1e1BqeBjDKYSbbC1DHtBsPiJUBBxjLC3dwcblU2_v_wP73z4g6LVFf0GP2mAng</recordid><startdate>20171113</startdate><enddate>20171113</enddate><creator>Ji, Hao</creator><creator>Wei, Yehui</creator><creator>Zhang, Xinlei</creator><creator>Jiang, Ran</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20171113</creationdate><title>Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application</title><author>Ji, Hao ; Wei, Yehui ; Zhang, Xinlei ; Jiang, Ran</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-d6e3edc94d5de4ca47d736dd73371db37d96cbb1c914f5ccdee585714b55fca33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum oxide</topic><topic>Applied physics</topic><topic>Deposition</topic><topic>Flash memory (computers)</topic><topic>Gallium</topic><topic>Indium gallium zinc oxide</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>Transistors</topic><topic>Trapping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ji, Hao</creatorcontrib><creatorcontrib>Wei, Yehui</creatorcontrib><creatorcontrib>Zhang, Xinlei</creatorcontrib><creatorcontrib>Jiang, Ran</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ji, Hao</au><au>Wei, Yehui</au><au>Zhang, Xinlei</au><au>Jiang, Ran</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application</atitle><jtitle>Applied physics letters</jtitle><date>2017-11-13</date><risdate>2017</risdate><volume>111</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4998207</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2017-11, Vol.111 (20) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum oxide Applied physics Deposition Flash memory (computers) Gallium Indium gallium zinc oxide Semiconductor devices Thin film transistors Transistors Trapping |
| title | Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application |
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