Studies on dielectric, optical, magnetic, magnetic domain structure, and resistance switching characteristics of highly c-axis oriented NZFO thin films

With the rapid development of new device miniaturization technology, there is invigorated interest in magnetic nanostructures for potential application in novel multifunctional devices. In continuation to our search for a suitable magnetic material having Curie temperature (Tc) well above room temperature for multifunctional applications, we have studied the dielectric, optical, magnetic, and resistance switching characteristics of Ni0.65Zn0.35Fe2O4 (NZFO) thin films. The observation of only (004) reflection in the X-ray diffraction patterns confirms the c-axis orientation and high quality growth of NZFO thin films. The presence of mixed valences of Fe2+/Fe3+ cations is probed by X-ray photon spectroscopy, which supports the cationic ordering-mediated large dielectric response. Our investigations reveal NZFO to be an indirect band gap material (∼1.8 eV) with a direct gap at ∼2.55 eV. These nanostructures exhibit high saturation magnetization and a low coercive field with a ferrimagnetic–paramagnetic phase transition of ∼713 K. Magnetic force microscopy studies revealed the stripe-like domain structure of the investigated thin films. In addition, these thin films exhibit reliable and repeatable unipolar resistive switching characteristics. The observed high dielectric permittivity with low loss tangent, large magnetization with soft magnetic behavior, striped magnetic domain structure and reliable resistance switching in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices.