Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices
The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism...
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creator | K, Deepak Roy, Amit Anjaneyulu, P. Kandaiah, Sakthivel Pinjare, Sampatrao L. |
description | The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism from Ohmic to Space-charge limited conduction when temperature and voltage are varied. The carriers in CuTCA devices exhibit hopping transport, in which carriers hop from one site to the other. The hole mobility in this polymer device is found to be dependent on electric field E (
μ
p
α
E
) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient γ and zero-field mobility μ
0 are temperature dependent. The values of mobility and activation energies are estimated from temperature (90–140 K) dependent charge transport studies and found to be in the range of 1 × 10−11–8 × 10−12 m2/(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient γ is in the order of 17.8 × 10−4 (m/V)1/2, and the value of zero-field mobility μ
0 is in the order of 1.2 × 10−11 m2/(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra. |
doi_str_mv | 10.1063/1.4993983 |
format | Article |
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μ
p
α
E
) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient γ and zero-field mobility μ
0 are temperature dependent. The values of mobility and activation energies are estimated from temperature (90–140 K) dependent charge transport studies and found to be in the range of 1 × 10−11–8 × 10−12 m2/(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient γ is in the order of 17.8 × 10−4 (m/V)1/2, and the value of zero-field mobility μ
0 is in the order of 1.2 × 10−11 m2/(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4993983</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Charge transport ; Copper ; Current voltage characteristics ; Electric fields ; Electric potential ; Hole mobility ; Polymers ; Reflectance ; Silver ; Spectrum analysis ; Temperature dependence ; Thin films</subject><ispartof>Journal of applied physics, 2017-10, Vol.122 (16)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-8d3a3ff6bb2b92edcce1a7225fc4b532006cbed7801db298a762bd4967ce5c3</citedby><cites>FETCH-LOGICAL-c327t-8d3a3ff6bb2b92edcce1a7225fc4b532006cbed7801db298a762bd4967ce5c3</cites><orcidid>0000-0003-4390-7705</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4993983$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>K, Deepak</creatorcontrib><creatorcontrib>Roy, Amit</creatorcontrib><creatorcontrib>Anjaneyulu, P.</creatorcontrib><creatorcontrib>Kandaiah, Sakthivel</creatorcontrib><creatorcontrib>Pinjare, Sampatrao L.</creatorcontrib><title>Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices</title><title>Journal of applied physics</title><description>The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism from Ohmic to Space-charge limited conduction when temperature and voltage are varied. The carriers in CuTCA devices exhibit hopping transport, in which carriers hop from one site to the other. The hole mobility in this polymer device is found to be dependent on electric field E (
μ
p
α
E
) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient γ and zero-field mobility μ
0 are temperature dependent. The values of mobility and activation energies are estimated from temperature (90–140 K) dependent charge transport studies and found to be in the range of 1 × 10−11–8 × 10−12 m2/(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient γ is in the order of 17.8 × 10−4 (m/V)1/2, and the value of zero-field mobility μ
0 is in the order of 1.2 × 10−11 m2/(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra.</description><subject>Applied physics</subject><subject>Charge transport</subject><subject>Copper</subject><subject>Current voltage characteristics</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>Hole mobility</subject><subject>Polymers</subject><subject>Reflectance</subject><subject>Silver</subject><subject>Spectrum analysis</subject><subject>Temperature dependence</subject><subject>Thin films</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0MtKAzEUBuAgCtbqwjcIuFKYmkvnkqUUq0LBhe5DJpc2ZSaJSVqoT2-kBfeucgjffw78ANxiNMOooY94NmeMso6egQlGHavaukbnYIIQwVXHWnYJrlLaIoRxR9kEjIuNiGsNcxQuBR8zHLXcCGfTCK2DocqHoKH0IegIrXdldFlYZ926ZKz4tq6EN9YPIuuSzWIYfPDDYSy-_Dto7DBCpfdW6nQNLowYkr45vVPwsXz-XLxWq_eXt8XTqpKUtLnqFBXUmKbvSc-IVlJqLFpCaiPnfU0JQo3stWo7hFVPWCfahvRqzppW6lrSKbg7bg3Rf-10ynzrd9GVg5xg3CDS1IgUdX9UMvqUojY8RDuKeOAY8d8uOeanLot9ONokbRa59PA_vPfxD_KgDP0BVCSFRg</recordid><startdate>20171028</startdate><enddate>20171028</enddate><creator>K, Deepak</creator><creator>Roy, Amit</creator><creator>Anjaneyulu, P.</creator><creator>Kandaiah, Sakthivel</creator><creator>Pinjare, Sampatrao L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4390-7705</orcidid></search><sort><creationdate>20171028</creationdate><title>Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices</title><author>K, Deepak ; Roy, Amit ; Anjaneyulu, P. ; Kandaiah, Sakthivel ; Pinjare, Sampatrao L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-8d3a3ff6bb2b92edcce1a7225fc4b532006cbed7801db298a762bd4967ce5c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Charge transport</topic><topic>Copper</topic><topic>Current voltage characteristics</topic><topic>Electric fields</topic><topic>Electric potential</topic><topic>Hole mobility</topic><topic>Polymers</topic><topic>Reflectance</topic><topic>Silver</topic><topic>Spectrum analysis</topic><topic>Temperature dependence</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>K, Deepak</creatorcontrib><creatorcontrib>Roy, Amit</creatorcontrib><creatorcontrib>Anjaneyulu, P.</creatorcontrib><creatorcontrib>Kandaiah, Sakthivel</creatorcontrib><creatorcontrib>Pinjare, Sampatrao L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>K, Deepak</au><au>Roy, Amit</au><au>Anjaneyulu, P.</au><au>Kandaiah, Sakthivel</au><au>Pinjare, Sampatrao L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices</atitle><jtitle>Journal of applied physics</jtitle><date>2017-10-28</date><risdate>2017</risdate><volume>122</volume><issue>16</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism from Ohmic to Space-charge limited conduction when temperature and voltage are varied. The carriers in CuTCA devices exhibit hopping transport, in which carriers hop from one site to the other. The hole mobility in this polymer device is found to be dependent on electric field E (
μ
p
α
E
) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient γ and zero-field mobility μ
0 are temperature dependent. The values of mobility and activation energies are estimated from temperature (90–140 K) dependent charge transport studies and found to be in the range of 1 × 10−11–8 × 10−12 m2/(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient γ is in the order of 17.8 × 10−4 (m/V)1/2, and the value of zero-field mobility μ
0 is in the order of 1.2 × 10−11 m2/(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4993983</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-4390-7705</orcidid></addata></record> |
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subjects | Applied physics Charge transport Copper Current voltage characteristics Electric fields Electric potential Hole mobility Polymers Reflectance Silver Spectrum analysis Temperature dependence Thin films |
title | Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices |
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