Black silicon morphologies using conventional RIE processing
We report on the use of conventional non-Bosch, non-cryogenic Reactive Ion Etching (RIE) processing to produce a range of low optical reflection morphologies on silicon wafer. Tapered structures and nano dendritic-pillars are patterned into silicon over a pressure range of 550 - 700 mTorr at various...
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| Veröffentlicht in: | AIP advances 2017-05, Vol.7 (5), p.055115-055115-7 |
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| container_end_page | 055115-7 |
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| container_issue | 5 |
| container_start_page | 055115 |
| container_title | AIP advances |
| container_volume | 7 |
| creator | Chowdhury, Zahidur R. Loh, Joel Y. Y. Pishon, Md. Nishanto Nahid Kherani, Nazir P. |
| description | We report on the use of conventional non-Bosch, non-cryogenic Reactive Ion Etching (RIE) processing to produce a range of low optical reflection morphologies on silicon wafer. Tapered structures and nano dendritic-pillars are patterned into silicon over a pressure range of 550 - 700 mTorr at various run times. Low pressure RIE conditions yield tapered profiles while at higher pressures nano-pillars are produced. The optimized condition of 650 mTorr for 20-30 minutes yields uniform distribution of nano dendritic pillars resulting in a low average reflectance of 4.2% – without an additional antireflective coating. A simple kinetic Monte-Carlo model shows that nano-dendritic structures can be formed due to low etching rate of side walls and evolve into tapered structures over a longer run time. Refractive index profiles built from our simulated patterns and surface morphology of the samples yield calculated reflectance curves that correlate well with experimental results. |
| doi_str_mv | 10.1063/1.4984215 |
| format | Article |
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Refractive index profiles built from our simulated patterns and surface morphology of the samples yield calculated reflectance curves that correlate well with experimental results.</description><subject>Antireflection coatings</subject><subject>Computer simulation</subject><subject>Dendritic structure</subject><subject>Ion etching</subject><subject>Low pressure</subject><subject>Monte Carlo simulation</subject><subject>Morphology</subject><subject>Optical reflection</subject><subject>Pillars</subject><subject>Reactive ion etching</subject><subject>Reflectance</subject><subject>Reflectance curves</subject><subject>Refractivity</subject><subject>Silicon</subject><subject>Silicon wafers</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kE9LAzEQxYMoWGoPfoMFTwpb82ey3QUvWqoWCoLoOaTJbE3dbmqyFfz2pm4RT84hEya_vOE9Qs4ZHTNaiGs2hqoEzuQRGaSzzAXnxfGf-ykZxbimqaBitIQBublrtHnPomuc8W228WH75hu_chizXXTtKkvjT2w751vdZM_zWbYN3mDcv52Rk1o3EUeHPiSv97OX6WO-eHqYT28XuRGV6PLCllBKQLmUXNdMc1haDUuKVnKgFoHWhQQqTCVBoq1KwQsEWdQ1LZAyK4Zk3utar9dqG9xGhy_ltVM_Ax9WSofOmQbVhAFUnIGwQEGXtmITm5YgGqSAuk5aF71WsvGxw9iptd-F5C0qznj6LIGLRF32lAk-xoD171ZG1T5rxdQh68Re9Ww0rtP7oP6BvwH5cnvq</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Chowdhury, Zahidur R.</creator><creator>Loh, Joel Y. 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Nishanto Nahid</creatorcontrib><creatorcontrib>Kherani, Nazir P.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chowdhury, Zahidur R.</au><au>Loh, Joel Y. Y.</au><au>Pishon, Md. Nishanto Nahid</au><au>Kherani, Nazir P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Black silicon morphologies using conventional RIE processing</atitle><jtitle>AIP advances</jtitle><date>2017-05</date><risdate>2017</risdate><volume>7</volume><issue>5</issue><spage>055115</spage><epage>055115-7</epage><pages>055115-055115-7</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>We report on the use of conventional non-Bosch, non-cryogenic Reactive Ion Etching (RIE) processing to produce a range of low optical reflection morphologies on silicon wafer. Tapered structures and nano dendritic-pillars are patterned into silicon over a pressure range of 550 - 700 mTorr at various run times. Low pressure RIE conditions yield tapered profiles while at higher pressures nano-pillars are produced. The optimized condition of 650 mTorr for 20-30 minutes yields uniform distribution of nano dendritic pillars resulting in a low average reflectance of 4.2% – without an additional antireflective coating. A simple kinetic Monte-Carlo model shows that nano-dendritic structures can be formed due to low etching rate of side walls and evolve into tapered structures over a longer run time. Refractive index profiles built from our simulated patterns and surface morphology of the samples yield calculated reflectance curves that correlate well with experimental results.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4984215</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-5966-7593</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry; EZB Electronic Journals Library |
| subjects | Antireflection coatings Computer simulation Dendritic structure Ion etching Low pressure Monte Carlo simulation Morphology Optical reflection Pillars Reactive ion etching Reflectance Reflectance curves Refractivity Silicon Silicon wafers |
| title | Black silicon morphologies using conventional RIE processing |
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