Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamen...

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Veröffentlicht in:	Journal of applied physics 2017-05, Vol.121 (18)
Hauptverfasser:	Kumazaki, Yusuke, Uemura, Keisuke, Sato, Taketomo, Hashizume, Tamotsu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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