New hexagonal boron nitride polytypes with triple-layer periodicity
Regular hexagonal boron nitride (h-BN) samples present a few of intrinsic stacking faults, which result in a long-standing controversy about their electronic properties. To resolve this controversy, we designed eight possible BN polytypes with triple-layer periodicity. Under ambient pressure, the en...
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| Veröffentlicht in: | Journal of applied physics 2017-04, Vol.121 (16) |
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| container_issue | 16 |
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| container_title | Journal of applied physics |
| container_volume | 121 |
| creator | Luo, Kun Yuan, Xiaohong Zhao, Zhisheng Yu, Dongli Xu, Bo Liu, Zhongyuan Tian, Yongjun Gao, Guoying He, Julong |
| description | Regular hexagonal boron nitride (h-BN) samples present a few of intrinsic stacking faults, which result in a long-standing controversy about their electronic properties. To resolve this controversy, we designed eight possible BN polytypes with triple-layer periodicity. Under ambient pressure, the energies of all the proposed polytypes are between those of observed AA and Aa (h-BN) structures. Two proposed polytypes with direct bandgaps might be responsible for the direct bandgap observed in the h-BN samples. A model was proposed to show how the proposed structures might exist in the h-BN samples by analyzing the stacking characteristics and the previous experimental micrographs of h-BN samples. |
| doi_str_mv | 10.1063/1.4981892 |
| format | Article |
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To resolve this controversy, we designed eight possible BN polytypes with triple-layer periodicity. Under ambient pressure, the energies of all the proposed polytypes are between those of observed AA and Aa (h-BN) structures. Two proposed polytypes with direct bandgaps might be responsible for the direct bandgap observed in the h-BN samples. A model was proposed to show how the proposed structures might exist in the h-BN samples by analyzing the stacking characteristics and the previous experimental micrographs of h-BN samples.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4981892</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Boron nitride ; Energy gap ; Periodic variations ; Photomicrographs ; Polytypes ; Pressure ; Stacking faults</subject><ispartof>Journal of applied physics, 2017-04, Vol.121 (16)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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A model was proposed to show how the proposed structures might exist in the h-BN samples by analyzing the stacking characteristics and the previous experimental micrographs of h-BN samples.</description><subject>Applied physics</subject><subject>Boron nitride</subject><subject>Energy gap</subject><subject>Periodic variations</subject><subject>Photomicrographs</subject><subject>Polytypes</subject><subject>Pressure</subject><subject>Stacking faults</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0MtKAzEUBuAgCtbLwjcIuFKYmstMLksp3qDopvuQmSQ2ZZzEJLXO2zvSgntXBw4fP-f8AFxhNMeI0Ts8r6XAQpIjMMNIyIo3DToGM4QIroTk8hSc5bxBCGNB5QwsXu0Oru23fg-D7mEbUhjg4EvyxsIY-rGM0Wa482UNp2XsbdXr0SYYbfLB-M6X8QKcON1ne3mY52D1-LBaPFfLt6eXxf2y6ijhpSLMda7jXBBEHWMOtbURmtWMt6I1mjFpTaM7QznXukUUSUEtNbLVtcRU0nNwvY-NKXxubS5qE7ZpujorgkndINxQOqmbvepSyDlZp2LyHzqNCiP1W5HC6lDRZG_3Nk9v6OLD8D_8FdIfVNE4-gMXHnUg</recordid><startdate>20170428</startdate><enddate>20170428</enddate><creator>Luo, Kun</creator><creator>Yuan, Xiaohong</creator><creator>Zhao, Zhisheng</creator><creator>Yu, Dongli</creator><creator>Xu, Bo</creator><creator>Liu, Zhongyuan</creator><creator>Tian, Yongjun</creator><creator>Gao, Guoying</creator><creator>He, Julong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0901-6781</orcidid><orcidid>https://orcid.org/0000-0002-5826-1612</orcidid><orcidid>https://orcid.org/0000-0001-8747-2462</orcidid></search><sort><creationdate>20170428</creationdate><title>New hexagonal boron nitride polytypes with triple-layer periodicity</title><author>Luo, Kun ; Yuan, Xiaohong ; Zhao, Zhisheng ; Yu, Dongli ; Xu, Bo ; Liu, Zhongyuan ; Tian, Yongjun ; Gao, Guoying ; He, Julong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-26fcfc778203f66f0b4d8a6467b8bda669ed5acd377aab030983e3d9ba491393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Boron nitride</topic><topic>Energy gap</topic><topic>Periodic variations</topic><topic>Photomicrographs</topic><topic>Polytypes</topic><topic>Pressure</topic><topic>Stacking faults</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Kun</creatorcontrib><creatorcontrib>Yuan, Xiaohong</creatorcontrib><creatorcontrib>Zhao, Zhisheng</creatorcontrib><creatorcontrib>Yu, Dongli</creatorcontrib><creatorcontrib>Xu, Bo</creatorcontrib><creatorcontrib>Liu, Zhongyuan</creatorcontrib><creatorcontrib>Tian, Yongjun</creatorcontrib><creatorcontrib>Gao, Guoying</creatorcontrib><creatorcontrib>He, Julong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Kun</au><au>Yuan, Xiaohong</au><au>Zhao, Zhisheng</au><au>Yu, Dongli</au><au>Xu, Bo</au><au>Liu, Zhongyuan</au><au>Tian, Yongjun</au><au>Gao, Guoying</au><au>He, Julong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New hexagonal boron nitride polytypes with triple-layer periodicity</atitle><jtitle>Journal of applied physics</jtitle><date>2017-04-28</date><risdate>2017</risdate><volume>121</volume><issue>16</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Regular hexagonal boron nitride (h-BN) samples present a few of intrinsic stacking faults, which result in a long-standing controversy about their electronic properties. 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| ispartof | Journal of applied physics, 2017-04, Vol.121 (16) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Boron nitride Energy gap Periodic variations Photomicrographs Polytypes Pressure Stacking faults |
| title | New hexagonal boron nitride polytypes with triple-layer periodicity |
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