Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier

Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate have been demonstrated. An AlAs0.10Sb0.90/GaSb H-structure superlattice design was used as the large-bandgap electron-barrier in these photodetectors. The photodetector is designed t...

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Veröffentlicht in:	Applied physics letters 2017-03, Vol.110 (10)
Hauptverfasser:	Haddadi, A., Chevallier, R., Dehzangi, A., Razeghi, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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