A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si heterostructure with optical transition at a wavelen...

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Veröffentlicht in:	Journal of applied physics 2017-03, Vol.121 (11)
Hauptverfasser:	Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M., Terai, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Band gap Deformation mechanisms Disilicides Electroluminescence Energy gap Heterostructures Integrated circuits Intermetallic compounds Iron silicide Light emission Light emitting diodes Linearity Luminescence Metal oxides Nanocrystals Near infrared radiation Optical pumping Optical transition Photonics Quantum efficiency Radiative recombination Room temperature Semiconductor materials Silicon Transmission electron microscopy
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