A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack

The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i...

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Veröffentlicht in:Applied physics letters 2017-03, Vol.110 (10)
Hauptverfasser: Diaz Leon, Juan J., Norris, Kate J., Yang, J. Joshua, Sevic, John F., Kobayashi, Nobuhiko P.
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container_issue 10
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container_title Applied physics letters
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creator Diaz Leon, Juan J.
Norris, Kate J.
Yang, J. Joshua
Sevic, John F.
Kobayashi, Nobuhiko P.
description The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i.e., selector and memristor) are vertically assembled via a self-aligned fabrication process combined with electroforming. In designing the device, niobium oxide and tantalum oxide are chosen as materials for selector and memristor, respectively. The formation of niobium oxide is visualized by exploiting the self-limiting reaction between niobium and tantalum oxide; crystalline niobium (di)oxide forms at the interface between metallic niobium and tantalum oxide via electrothermal heating, resulting in a niobium oxide selector self-aligned to a tantalum oxide memristor. A steady-state finite element analysis is used to assess the electrothermal heating expected to occur in the device. Current-voltage measurements and structural/chemical analyses conducted for the virgin device, the electroforming process, and the functional selector-memristor device are presented. The demonstration of a self-aligned, monolithically integrated selector-memristor device would pave a practical pathway to various circuits based on memristors attainable at manufacturing scales.
doi_str_mv 10.1063/1.4977945
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Alignment
Applied physics
Capital goods
Electric potential
Electrical measurement
Electroforming
Finite element method
Heating
Materials selection
Memristors
Niobium oxides
Organic chemistry
Selectors
Self alignment
Tantalum oxides
title A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack
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