A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack
The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i...
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Veröffentlicht in: | Applied physics letters 2017-03, Vol.110 (10) |
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creator | Diaz Leon, Juan J. Norris, Kate J. Yang, J. Joshua Sevic, John F. Kobayashi, Nobuhiko P. |
description | The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i.e., selector and memristor) are vertically assembled via a self-aligned fabrication process combined with electroforming. In designing the device, niobium oxide and tantalum oxide are chosen as materials for selector and memristor, respectively. The formation of niobium oxide is visualized by exploiting the self-limiting reaction between niobium and tantalum oxide; crystalline niobium (di)oxide forms at the interface between metallic niobium and tantalum oxide via electrothermal heating, resulting in a niobium oxide selector self-aligned to a tantalum oxide memristor. A steady-state finite element analysis is used to assess the electrothermal heating expected to occur in the device. Current-voltage measurements and structural/chemical analyses conducted for the virgin device, the electroforming process, and the functional selector-memristor device are presented. The demonstration of a self-aligned, monolithically integrated selector-memristor device would pave a practical pathway to various circuits based on memristors attainable at manufacturing scales. |
doi_str_mv | 10.1063/1.4977945 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4977945</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124525799</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-4282efb737cc8a8de8476263d5bece01988774b739af8a3529ad9788f2ab91e63</originalsourceid><addsrcrecordid>eNqdkM1KAzEUhYMoWKsL32DAlUJqfiaTZFmKtULBja5DJpNI6kxSk1T07Z3SintX95x7P-6BA8A1RjOMGnqPZ7XkXNbsBEww4hxSjMUpmCCEKGwkw-fgIufNaBmhdAJW8yr42PrdUMUv31lYdCi6_7VVtr01JSY42CH5PKr9ykHd-7dguyroEHPR5v0SnDndZ3t1nFPwunx4Wazg-vnxaTFfQ0MJL7AmgljXcsqNEVp0VtS8IQ3tWGuNRVgKwXk93qV2QlNGpO4kF8IR3UpsGzoFN4e_2xQ_djYXtYm7FMZIRTCpGWFcypG6PVAmxZyTdWqb_KDTt8JI7YtSWB2LGtm7A5uNL7r4GP4Hf8b0B6pt5-gPjrd2sg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124525799</pqid></control><display><type>article</type><title>A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Diaz Leon, Juan J. ; Norris, Kate J. ; Yang, J. Joshua ; Sevic, John F. ; Kobayashi, Nobuhiko P.</creator><creatorcontrib>Diaz Leon, Juan J. ; Norris, Kate J. ; Yang, J. Joshua ; Sevic, John F. ; Kobayashi, Nobuhiko P.</creatorcontrib><description>The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i.e., selector and memristor) are vertically assembled via a self-aligned fabrication process combined with electroforming. In designing the device, niobium oxide and tantalum oxide are chosen as materials for selector and memristor, respectively. The formation of niobium oxide is visualized by exploiting the self-limiting reaction between niobium and tantalum oxide; crystalline niobium (di)oxide forms at the interface between metallic niobium and tantalum oxide via electrothermal heating, resulting in a niobium oxide selector self-aligned to a tantalum oxide memristor. A steady-state finite element analysis is used to assess the electrothermal heating expected to occur in the device. Current-voltage measurements and structural/chemical analyses conducted for the virgin device, the electroforming process, and the functional selector-memristor device are presented. The demonstration of a self-aligned, monolithically integrated selector-memristor device would pave a practical pathway to various circuits based on memristors attainable at manufacturing scales.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4977945</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Alignment ; Applied physics ; Capital goods ; Electric potential ; Electrical measurement ; Electroforming ; Finite element method ; Heating ; Materials selection ; Memristors ; Niobium oxides ; Organic chemistry ; Selectors ; Self alignment ; Tantalum oxides</subject><ispartof>Applied physics letters, 2017-03, Vol.110 (10)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-4282efb737cc8a8de8476263d5bece01988774b739af8a3529ad9788f2ab91e63</citedby><cites>FETCH-LOGICAL-c327t-4282efb737cc8a8de8476263d5bece01988774b739af8a3529ad9788f2ab91e63</cites><orcidid>0000-0001-8941-9948</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4977945$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27903,27904,76130</link.rule.ids></links><search><creatorcontrib>Diaz Leon, Juan J.</creatorcontrib><creatorcontrib>Norris, Kate J.</creatorcontrib><creatorcontrib>Yang, J. Joshua</creatorcontrib><creatorcontrib>Sevic, John F.</creatorcontrib><creatorcontrib>Kobayashi, Nobuhiko P.</creatorcontrib><title>A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack</title><title>Applied physics letters</title><description>The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i.e., selector and memristor) are vertically assembled via a self-aligned fabrication process combined with electroforming. In designing the device, niobium oxide and tantalum oxide are chosen as materials for selector and memristor, respectively. The formation of niobium oxide is visualized by exploiting the self-limiting reaction between niobium and tantalum oxide; crystalline niobium (di)oxide forms at the interface between metallic niobium and tantalum oxide via electrothermal heating, resulting in a niobium oxide selector self-aligned to a tantalum oxide memristor. A steady-state finite element analysis is used to assess the electrothermal heating expected to occur in the device. Current-voltage measurements and structural/chemical analyses conducted for the virgin device, the electroforming process, and the functional selector-memristor device are presented. The demonstration of a self-aligned, monolithically integrated selector-memristor device would pave a practical pathway to various circuits based on memristors attainable at manufacturing scales.</description><subject>Alignment</subject><subject>Applied physics</subject><subject>Capital goods</subject><subject>Electric potential</subject><subject>Electrical measurement</subject><subject>Electroforming</subject><subject>Finite element method</subject><subject>Heating</subject><subject>Materials selection</subject><subject>Memristors</subject><subject>Niobium oxides</subject><subject>Organic chemistry</subject><subject>Selectors</subject><subject>Self alignment</subject><subject>Tantalum oxides</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkM1KAzEUhYMoWKsL32DAlUJqfiaTZFmKtULBja5DJpNI6kxSk1T07Z3SintX95x7P-6BA8A1RjOMGnqPZ7XkXNbsBEww4hxSjMUpmCCEKGwkw-fgIufNaBmhdAJW8yr42PrdUMUv31lYdCi6_7VVtr01JSY42CH5PKr9ykHd-7dguyroEHPR5v0SnDndZ3t1nFPwunx4Wazg-vnxaTFfQ0MJL7AmgljXcsqNEVp0VtS8IQ3tWGuNRVgKwXk93qV2QlNGpO4kF8IR3UpsGzoFN4e_2xQ_djYXtYm7FMZIRTCpGWFcypG6PVAmxZyTdWqb_KDTt8JI7YtSWB2LGtm7A5uNL7r4GP4Hf8b0B6pt5-gPjrd2sg</recordid><startdate>20170306</startdate><enddate>20170306</enddate><creator>Diaz Leon, Juan J.</creator><creator>Norris, Kate J.</creator><creator>Yang, J. Joshua</creator><creator>Sevic, John F.</creator><creator>Kobayashi, Nobuhiko P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8941-9948</orcidid></search><sort><creationdate>20170306</creationdate><title>A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack</title><author>Diaz Leon, Juan J. ; Norris, Kate J. ; Yang, J. Joshua ; Sevic, John F. ; Kobayashi, Nobuhiko P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-4282efb737cc8a8de8476263d5bece01988774b739af8a3529ad9788f2ab91e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Alignment</topic><topic>Applied physics</topic><topic>Capital goods</topic><topic>Electric potential</topic><topic>Electrical measurement</topic><topic>Electroforming</topic><topic>Finite element method</topic><topic>Heating</topic><topic>Materials selection</topic><topic>Memristors</topic><topic>Niobium oxides</topic><topic>Organic chemistry</topic><topic>Selectors</topic><topic>Self alignment</topic><topic>Tantalum oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Diaz Leon, Juan J.</creatorcontrib><creatorcontrib>Norris, Kate J.</creatorcontrib><creatorcontrib>Yang, J. Joshua</creatorcontrib><creatorcontrib>Sevic, John F.</creatorcontrib><creatorcontrib>Kobayashi, Nobuhiko P.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Diaz Leon, Juan J.</au><au>Norris, Kate J.</au><au>Yang, J. Joshua</au><au>Sevic, John F.</au><au>Kobayashi, Nobuhiko P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack</atitle><jtitle>Applied physics letters</jtitle><date>2017-03-06</date><risdate>2017</risdate><volume>110</volume><issue>10</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i.e., selector and memristor) are vertically assembled via a self-aligned fabrication process combined with electroforming. In designing the device, niobium oxide and tantalum oxide are chosen as materials for selector and memristor, respectively. The formation of niobium oxide is visualized by exploiting the self-limiting reaction between niobium and tantalum oxide; crystalline niobium (di)oxide forms at the interface between metallic niobium and tantalum oxide via electrothermal heating, resulting in a niobium oxide selector self-aligned to a tantalum oxide memristor. A steady-state finite element analysis is used to assess the electrothermal heating expected to occur in the device. Current-voltage measurements and structural/chemical analyses conducted for the virgin device, the electroforming process, and the functional selector-memristor device are presented. The demonstration of a self-aligned, monolithically integrated selector-memristor device would pave a practical pathway to various circuits based on memristors attainable at manufacturing scales.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4977945</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8941-9948</orcidid></addata></record> |
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subjects | Alignment Applied physics Capital goods Electric potential Electrical measurement Electroforming Finite element method Heating Materials selection Memristors Niobium oxides Organic chemistry Selectors Self alignment Tantalum oxides |
title | A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack |
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