Constructing submicron textures on mc-Si solar cells via copper-catalyzed chemical etching
Mass production of diamond-wire-sawn (DWS) multicrystalline silicon (mc-Si) solar cells reached a significant point of maturity through utilization of metal-catalyzed chemical etching (MCCE). However, nanotextured DWS mc-Si solar cells usually produced with Ag-MCCE still suffer from certain drawback...
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Veröffentlicht in: | Applied physics letters 2017-02, Vol.110 (9) |
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creator | Zha, Jiawei Wang, Ting Pan, Chengfeng Chen, Kexun Hu, Fenqin Pi, Xiaodong Su, Xiaodong |
description | Mass production of diamond-wire-sawn (DWS) multicrystalline silicon (mc-Si) solar cells reached a significant point of maturity through utilization of metal-catalyzed chemical etching (MCCE). However, nanotextured DWS mc-Si solar cells usually produced with Ag-MCCE still suffer from certain drawbacks, such as remaining saw marks, color differences among grains, and slight decreases in the open-circuit voltage (Voc). In this work, we show that unoriented Cu-based MCCE (Cu-MCCE) not only depresses the saw marks and color differences but also introduces random shallow pits, which act as artificial defects that can be easily converted into a submicron texture using conventional HNO3/HF etching. Moreover, we demonstrate that the efficiency of DWS mc-Si solar cells produced with the Cu-MCCE process is greater than 19%, with improved Voc resulting from better surface passivation. This cost-effective Cu-MCCE method is, therefore, of significant potential for the photovoltaic industry. |
doi_str_mv | 10.1063/1.4977191 |
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However, nanotextured DWS mc-Si solar cells usually produced with Ag-MCCE still suffer from certain drawbacks, such as remaining saw marks, color differences among grains, and slight decreases in the open-circuit voltage (Voc). In this work, we show that unoriented Cu-based MCCE (Cu-MCCE) not only depresses the saw marks and color differences but also introduces random shallow pits, which act as artificial defects that can be easily converted into a submicron texture using conventional HNO3/HF etching. Moreover, we demonstrate that the efficiency of DWS mc-Si solar cells produced with the Cu-MCCE process is greater than 19%, with improved Voc resulting from better surface passivation. This cost-effective Cu-MCCE method is, therefore, of significant potential for the photovoltaic industry.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4977191</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chemical etching ; Color ; Copper ; Diamonds ; Hafnium ; Mass production ; Open circuit voltage ; Organic chemistry ; Photovoltaic cells ; Silicon ; Solar cells</subject><ispartof>Applied physics letters, 2017-02, Vol.110 (9)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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However, nanotextured DWS mc-Si solar cells usually produced with Ag-MCCE still suffer from certain drawbacks, such as remaining saw marks, color differences among grains, and slight decreases in the open-circuit voltage (Voc). In this work, we show that unoriented Cu-based MCCE (Cu-MCCE) not only depresses the saw marks and color differences but also introduces random shallow pits, which act as artificial defects that can be easily converted into a submicron texture using conventional HNO3/HF etching. Moreover, we demonstrate that the efficiency of DWS mc-Si solar cells produced with the Cu-MCCE process is greater than 19%, with improved Voc resulting from better surface passivation. This cost-effective Cu-MCCE method is, therefore, of significant potential for the photovoltaic industry.</description><subject>Applied physics</subject><subject>Chemical etching</subject><subject>Color</subject><subject>Copper</subject><subject>Diamonds</subject><subject>Hafnium</subject><subject>Mass production</subject><subject>Open circuit voltage</subject><subject>Organic chemistry</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Solar cells</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK4e_AcBTwpdM03TpkdZ_IIFD-rFS0inqdul29QkFddfb2QXPQieZgaeeYZ5CTkFNgOW80uYZWVRQAl7ZAKsKBIOIPfJhDHGk7wUcEiOvF_FUaScT8jL3PY-uBFD279SP1brFp3taTAfYXTG09ivMXlsqbeddhRN13n63mqKdhiMS1AH3W0-TU1xaeKy7qgJuIy2Y3LQ6M6bk12dkueb66f5XbJ4uL2fXy0S5GkRkhp0msscJfJSFyarWNbIqkSNUgjBRWUMMzrTpdRSIhS1qTNRVU1ao5aZRj4lZ1vv4OzbaHxQKzu6Pp5UKaSZyABSiNT5lorvee9MowbXrrXbKGDqOzoFahddZC-2rMc26NDa_gd-t-4XVEPd_Af_NX8B42Z-hA</recordid><startdate>20170227</startdate><enddate>20170227</enddate><creator>Zha, Jiawei</creator><creator>Wang, Ting</creator><creator>Pan, Chengfeng</creator><creator>Chen, Kexun</creator><creator>Hu, Fenqin</creator><creator>Pi, Xiaodong</creator><creator>Su, Xiaodong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4233-6181</orcidid><orcidid>https://orcid.org/0000-0002-3477-4958</orcidid></search><sort><creationdate>20170227</creationdate><title>Constructing submicron textures on mc-Si solar cells via copper-catalyzed chemical etching</title><author>Zha, Jiawei ; Wang, Ting ; Pan, Chengfeng ; Chen, Kexun ; Hu, Fenqin ; Pi, Xiaodong ; Su, Xiaodong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-d1a2686c8c39a7e4b04f8b9cac855535bee0ea4a98a88c17ded45bbf2dca84ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Chemical etching</topic><topic>Color</topic><topic>Copper</topic><topic>Diamonds</topic><topic>Hafnium</topic><topic>Mass production</topic><topic>Open circuit voltage</topic><topic>Organic chemistry</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Solar cells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zha, Jiawei</creatorcontrib><creatorcontrib>Wang, Ting</creatorcontrib><creatorcontrib>Pan, Chengfeng</creatorcontrib><creatorcontrib>Chen, Kexun</creatorcontrib><creatorcontrib>Hu, Fenqin</creatorcontrib><creatorcontrib>Pi, Xiaodong</creatorcontrib><creatorcontrib>Su, Xiaodong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zha, Jiawei</au><au>Wang, Ting</au><au>Pan, Chengfeng</au><au>Chen, Kexun</au><au>Hu, Fenqin</au><au>Pi, Xiaodong</au><au>Su, Xiaodong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Constructing submicron textures on mc-Si solar cells via copper-catalyzed chemical etching</atitle><jtitle>Applied physics letters</jtitle><date>2017-02-27</date><risdate>2017</risdate><volume>110</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Mass production of diamond-wire-sawn (DWS) multicrystalline silicon (mc-Si) solar cells reached a significant point of maturity through utilization of metal-catalyzed chemical etching (MCCE). However, nanotextured DWS mc-Si solar cells usually produced with Ag-MCCE still suffer from certain drawbacks, such as remaining saw marks, color differences among grains, and slight decreases in the open-circuit voltage (Voc). In this work, we show that unoriented Cu-based MCCE (Cu-MCCE) not only depresses the saw marks and color differences but also introduces random shallow pits, which act as artificial defects that can be easily converted into a submicron texture using conventional HNO3/HF etching. Moreover, we demonstrate that the efficiency of DWS mc-Si solar cells produced with the Cu-MCCE process is greater than 19%, with improved Voc resulting from better surface passivation. 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subjects | Applied physics Chemical etching Color Copper Diamonds Hafnium Mass production Open circuit voltage Organic chemistry Photovoltaic cells Silicon Solar cells |
title | Constructing submicron textures on mc-Si solar cells via copper-catalyzed chemical etching |
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