Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

Mobility and critical electric field for bulk Al x Ga1 -x N alloys across the full composition range (0 ≤ x ≤ 1) are analyzed to address the potential application of this material system for power electronics. Calculation of the temperature-dependent electron mobility includes the potential limitati...

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Veröffentlicht in:	Journal of applied physics 2017-02, Vol.121 (5)
Hauptverfasser:	Coltrin, Michael E., Kaplar, Robert J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Applied physics Composition Deformation mechanisms Electric fields Electron mobility Electronic devices Electronics Figure of merit Piezoelectricity Scattering Temperature dependence
Online-Zugang:	Volltext
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