Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway
We demonstrate a vertical organic light emitting transistor (VOLET) showing a high current on/off ratio through dielectric encapsulation of a finger-like source electrode, which is placed between the bottom gate electrode and the top drain electrode. In such a VOLET configuration, the charge transpo...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2017-01, Vol.121 (2) |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 2 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 121 |
| creator | Lee, Gyujeong Lee, In-Ho Park, Hea-Lim Lee, Sin-Hyung Han, Jongseok Lee, Changhee Keum, Chang-Min Lee, Sin-Doo |
| description | We demonstrate a vertical organic light emitting transistor (VOLET) showing a high current on/off ratio through dielectric encapsulation of a finger-like source electrode, which is placed between the bottom gate electrode and the top drain electrode. In such a VOLET configuration, the charge transport occurs largely from the source electrode to an underlying organic semiconductor (OSC) layer through the interface between the OSC and the gate insulator. Accordingly, the current leakage is greatly reduced and the transistor-type switching behavior with a high on/off current ratio is achieved. The on/off current ratio of our VOLET is about 100 times higher than that of an existing VOLET with no dielectric encapsulation. Numerical simulations of the spatial distributions of the charge densities and the charge pathways performed in the two different VOLET configurations are in good agreement with the experimental results. Our dielectric encapsulation approach will provide a versatile method for developing a new class of high-performance OLET displays. |
| doi_str_mv | 10.1063/1.4974008 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4974008</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124695436</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-3645e7e737c92db13916670c7b6037e8dc1c93095a9a95dec36a31cf6b9486c43</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouK4e_AcBTwrVpGmT5ijiFwhe1GvJppNtltrUSar4L_zJdl3Rg-BpYN6HZ5iXkEPOTjmT4oyfFloVjFVbZMZZpTNVlmybzBjLeVZppXfJXowrxjivhJ6RjyfA5K3paMCl6b2lnV-2KYNnn5LvlzSh6aOPKSCNbXhbrwxtJ4baERH6REN_FpyjaJIPNLUYxilsPHRgE05C6K0Z4tit8566SZRaoODclPtXoLY1uAQ6mNS-mfd9suNMF-Hge87J49Xlw8VNdnd_fXtxfpdZkauUCVmUoEAJZXXeLLjQXErFrFpIJhRUjeVWC6ZLo40uG7BCGsGtkwtdVNIWYk6ONt4Bw8sIMdWrMGI_naxznhdSl4WQE3W8oSyGGBFcPaB_Nvhec1avC695_V34xJ5s2Gh9-nr2B34N-AvWQ-P-g_-aPwHOP5Gn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124695436</pqid></control><display><type>article</type><title>Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Lee, Gyujeong ; Lee, In-Ho ; Park, Hea-Lim ; Lee, Sin-Hyung ; Han, Jongseok ; Lee, Changhee ; Keum, Chang-Min ; Lee, Sin-Doo</creator><creatorcontrib>Lee, Gyujeong ; Lee, In-Ho ; Park, Hea-Lim ; Lee, Sin-Hyung ; Han, Jongseok ; Lee, Changhee ; Keum, Chang-Min ; Lee, Sin-Doo</creatorcontrib><description>We demonstrate a vertical organic light emitting transistor (VOLET) showing a high current on/off ratio through dielectric encapsulation of a finger-like source electrode, which is placed between the bottom gate electrode and the top drain electrode. In such a VOLET configuration, the charge transport occurs largely from the source electrode to an underlying organic semiconductor (OSC) layer through the interface between the OSC and the gate insulator. Accordingly, the current leakage is greatly reduced and the transistor-type switching behavior with a high on/off current ratio is achieved. The on/off current ratio of our VOLET is about 100 times higher than that of an existing VOLET with no dielectric encapsulation. Numerical simulations of the spatial distributions of the charge densities and the charge pathways performed in the two different VOLET configurations are in good agreement with the experimental results. Our dielectric encapsulation approach will provide a versatile method for developing a new class of high-performance OLET displays.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4974008</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Charge density ; Charge distribution ; Charge transport ; Computer simulation ; Configurations ; Current leakage ; Current ratio ; Dielectrics ; Electrodes ; Encapsulation ; High current ; Transistors</subject><ispartof>Journal of applied physics, 2017-01, Vol.121 (2)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-3645e7e737c92db13916670c7b6037e8dc1c93095a9a95dec36a31cf6b9486c43</citedby><cites>FETCH-LOGICAL-c327t-3645e7e737c92db13916670c7b6037e8dc1c93095a9a95dec36a31cf6b9486c43</cites><orcidid>0000-0003-2800-8250 ; 0000-0001-7072-5937 ; 0000-0003-4550-2955</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4974008$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Lee, Gyujeong</creatorcontrib><creatorcontrib>Lee, In-Ho</creatorcontrib><creatorcontrib>Park, Hea-Lim</creatorcontrib><creatorcontrib>Lee, Sin-Hyung</creatorcontrib><creatorcontrib>Han, Jongseok</creatorcontrib><creatorcontrib>Lee, Changhee</creatorcontrib><creatorcontrib>Keum, Chang-Min</creatorcontrib><creatorcontrib>Lee, Sin-Doo</creatorcontrib><title>Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway</title><title>Journal of applied physics</title><description>We demonstrate a vertical organic light emitting transistor (VOLET) showing a high current on/off ratio through dielectric encapsulation of a finger-like source electrode, which is placed between the bottom gate electrode and the top drain electrode. In such a VOLET configuration, the charge transport occurs largely from the source electrode to an underlying organic semiconductor (OSC) layer through the interface between the OSC and the gate insulator. Accordingly, the current leakage is greatly reduced and the transistor-type switching behavior with a high on/off current ratio is achieved. The on/off current ratio of our VOLET is about 100 times higher than that of an existing VOLET with no dielectric encapsulation. Numerical simulations of the spatial distributions of the charge densities and the charge pathways performed in the two different VOLET configurations are in good agreement with the experimental results. Our dielectric encapsulation approach will provide a versatile method for developing a new class of high-performance OLET displays.</description><subject>Applied physics</subject><subject>Charge density</subject><subject>Charge distribution</subject><subject>Charge transport</subject><subject>Computer simulation</subject><subject>Configurations</subject><subject>Current leakage</subject><subject>Current ratio</subject><subject>Dielectrics</subject><subject>Electrodes</subject><subject>Encapsulation</subject><subject>High current</subject><subject>Transistors</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK4e_AcBTwrVpGmT5ijiFwhe1GvJppNtltrUSar4L_zJdl3Rg-BpYN6HZ5iXkEPOTjmT4oyfFloVjFVbZMZZpTNVlmybzBjLeVZppXfJXowrxjivhJ6RjyfA5K3paMCl6b2lnV-2KYNnn5LvlzSh6aOPKSCNbXhbrwxtJ4baERH6REN_FpyjaJIPNLUYxilsPHRgE05C6K0Z4tit8566SZRaoODclPtXoLY1uAQ6mNS-mfd9suNMF-Hge87J49Xlw8VNdnd_fXtxfpdZkauUCVmUoEAJZXXeLLjQXErFrFpIJhRUjeVWC6ZLo40uG7BCGsGtkwtdVNIWYk6ONt4Bw8sIMdWrMGI_naxznhdSl4WQE3W8oSyGGBFcPaB_Nvhec1avC695_V34xJ5s2Gh9-nr2B34N-AvWQ-P-g_-aPwHOP5Gn</recordid><startdate>20170114</startdate><enddate>20170114</enddate><creator>Lee, Gyujeong</creator><creator>Lee, In-Ho</creator><creator>Park, Hea-Lim</creator><creator>Lee, Sin-Hyung</creator><creator>Han, Jongseok</creator><creator>Lee, Changhee</creator><creator>Keum, Chang-Min</creator><creator>Lee, Sin-Doo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2800-8250</orcidid><orcidid>https://orcid.org/0000-0001-7072-5937</orcidid><orcidid>https://orcid.org/0000-0003-4550-2955</orcidid></search><sort><creationdate>20170114</creationdate><title>Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway</title><author>Lee, Gyujeong ; Lee, In-Ho ; Park, Hea-Lim ; Lee, Sin-Hyung ; Han, Jongseok ; Lee, Changhee ; Keum, Chang-Min ; Lee, Sin-Doo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-3645e7e737c92db13916670c7b6037e8dc1c93095a9a95dec36a31cf6b9486c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Charge density</topic><topic>Charge distribution</topic><topic>Charge transport</topic><topic>Computer simulation</topic><topic>Configurations</topic><topic>Current leakage</topic><topic>Current ratio</topic><topic>Dielectrics</topic><topic>Electrodes</topic><topic>Encapsulation</topic><topic>High current</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Gyujeong</creatorcontrib><creatorcontrib>Lee, In-Ho</creatorcontrib><creatorcontrib>Park, Hea-Lim</creatorcontrib><creatorcontrib>Lee, Sin-Hyung</creatorcontrib><creatorcontrib>Han, Jongseok</creatorcontrib><creatorcontrib>Lee, Changhee</creatorcontrib><creatorcontrib>Keum, Chang-Min</creatorcontrib><creatorcontrib>Lee, Sin-Doo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Gyujeong</au><au>Lee, In-Ho</au><au>Park, Hea-Lim</au><au>Lee, Sin-Hyung</au><au>Han, Jongseok</au><au>Lee, Changhee</au><au>Keum, Chang-Min</au><au>Lee, Sin-Doo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway</atitle><jtitle>Journal of applied physics</jtitle><date>2017-01-14</date><risdate>2017</risdate><volume>121</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We demonstrate a vertical organic light emitting transistor (VOLET) showing a high current on/off ratio through dielectric encapsulation of a finger-like source electrode, which is placed between the bottom gate electrode and the top drain electrode. In such a VOLET configuration, the charge transport occurs largely from the source electrode to an underlying organic semiconductor (OSC) layer through the interface between the OSC and the gate insulator. Accordingly, the current leakage is greatly reduced and the transistor-type switching behavior with a high on/off current ratio is achieved. The on/off current ratio of our VOLET is about 100 times higher than that of an existing VOLET with no dielectric encapsulation. Numerical simulations of the spatial distributions of the charge densities and the charge pathways performed in the two different VOLET configurations are in good agreement with the experimental results. Our dielectric encapsulation approach will provide a versatile method for developing a new class of high-performance OLET displays.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4974008</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-2800-8250</orcidid><orcidid>https://orcid.org/0000-0001-7072-5937</orcidid><orcidid>https://orcid.org/0000-0003-4550-2955</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2017-01, Vol.121 (2) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_4974008 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Charge density Charge distribution Charge transport Computer simulation Configurations Current leakage Current ratio Dielectrics Electrodes Encapsulation High current Transistors |
| title | Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T02%3A33%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vertical%20organic%20light-emitting%20transistor%20showing%20a%20high%20current%20on/off%20ratio%20through%20dielectric%20encapsulation%20for%20the%20effective%20charge%20pathway&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lee,%20Gyujeong&rft.date=2017-01-14&rft.volume=121&rft.issue=2&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4974008&rft_dat=%3Cproquest_cross%3E2124695436%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124695436&rft_id=info:pmid/&rfr_iscdi=true |