Surface smoothing during plasma etching of Si in Cl2

Effects of initial roughness on the evolution of plasma-induced surface roughness have been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy in the range Ei  ≈ 20–500 eV. Experiments showed that smoothing of initially rough surf...

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Veröffentlicht in:	Applied physics letters 2016-11, Vol.109 (20)
Hauptverfasser:	Nakazaki, Nobuya, Matsumoto, Haruka, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Computer simulation Evolution Ion scattering Monte Carlo simulation Plasma etching Plasmas (physics) Roughening Smoothing Surface roughness
Online-Zugang:	Volltext
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