Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes
We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar ( 11 2 ¯ 2 ) GaN substrate (Bulk-GaN) and a low-cost large-size ( 11 2 ¯ 2 ) GaN templ...
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| Veröffentlicht in: | Journal of applied physics 2016-10, Vol.120 (13) |
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| creator | Dinh, Duc V. Corbett, Brian Parbrook, Peter J. Koslow, Ingrid. L. Rychetsky, Monir Guttmann, Martin Wernicke, Tim Kneissl, Michael Mounir, Christian Schwarz, Ulrich Glaab, Johannes Netzel, Carsten Brunner, Frank Weyers, Markus |
| description | We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (
11
2
¯
2
) GaN substrate (Bulk-GaN) and a low-cost large-size (
11
2
¯
2
) GaN template created on patterned (
10
1
¯
2
) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density. |
| doi_str_mv | 10.1063/1.4963757 |
| format | Article |
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11
2
¯
2
) GaN substrate (Bulk-GaN) and a low-cost large-size (
11
2
¯
2
) GaN template created on patterned (
10
1
¯
2
) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4963757</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bulk density ; Dislocation density ; Gallium nitrides ; Indium gallium nitrides ; Light emitting diodes ; Optical properties ; Organic light emitting diodes ; Photoluminescence ; Quantum efficiency ; Quantum wells ; Sapphire ; Stacking faults ; Substrates ; Threading dislocations</subject><ispartof>Journal of applied physics, 2016-10, Vol.120 (13)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c308t-c6fad0c9f63503cae5ab67dbfddac3d084f286fe9d271fb1a2f288143c153d023</citedby><cites>FETCH-LOGICAL-c308t-c6fad0c9f63503cae5ab67dbfddac3d084f286fe9d271fb1a2f288143c153d023</cites><orcidid>0000-0001-8856-7914 ; 0000-0002-5915-3365 ; 0000-0002-1889-2188</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4963757$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Dinh, Duc V.</creatorcontrib><creatorcontrib>Corbett, Brian</creatorcontrib><creatorcontrib>Parbrook, Peter J.</creatorcontrib><creatorcontrib>Koslow, Ingrid. L.</creatorcontrib><creatorcontrib>Rychetsky, Monir</creatorcontrib><creatorcontrib>Guttmann, Martin</creatorcontrib><creatorcontrib>Wernicke, Tim</creatorcontrib><creatorcontrib>Kneissl, Michael</creatorcontrib><creatorcontrib>Mounir, Christian</creatorcontrib><creatorcontrib>Schwarz, Ulrich</creatorcontrib><creatorcontrib>Glaab, Johannes</creatorcontrib><creatorcontrib>Netzel, Carsten</creatorcontrib><creatorcontrib>Brunner, Frank</creatorcontrib><creatorcontrib>Weyers, Markus</creatorcontrib><title>Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes</title><title>Journal of applied physics</title><description>We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (
11
2
¯
2
) GaN substrate (Bulk-GaN) and a low-cost large-size (
11
2
¯
2
) GaN template created on patterned (
10
1
¯
2
) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.</description><subject>Applied physics</subject><subject>Bulk density</subject><subject>Dislocation density</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Optical properties</subject><subject>Organic light emitting diodes</subject><subject>Photoluminescence</subject><subject>Quantum efficiency</subject><subject>Quantum wells</subject><subject>Sapphire</subject><subject>Stacking faults</subject><subject>Substrates</subject><subject>Threading dislocations</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp90M1KAzEQB_AgCtbqwTcIeLHC1symu5scpWgtFAXRc8jmo92y3WyTVOhT-Q4-mStb9CB4mWGYHzPwR-gSyBhITm9hPOE5LbLiCA2AMJ4UWUaO0YCQFBLGC36KzkJYEwLAKB8g9eJqg53FYVeG6GU0eLuTdRX32DU4rgxujbfOb2Sjemc2Vetq6fE1BsAp_vzoygjPm5l8wnW1XMWkIzFWzRLrymkTztGJlXUwF4c-RG8P96_Tx2TxPJtP7xaJooTFROVWaqK4zWlGqJImk2Ve6NJqLRXVhE1synJruE4LsCXItJsZTKiCrFundIiu-rutd9udCVGs3c433UuRQgo5Bc6yTo16pbwLwRsrWl9tpN8LIOI7QwHikGFnb3obVBVlrFzzg9-d_4Wi1fY__PfyFxuXfy4</recordid><startdate>20161007</startdate><enddate>20161007</enddate><creator>Dinh, Duc V.</creator><creator>Corbett, Brian</creator><creator>Parbrook, Peter J.</creator><creator>Koslow, Ingrid. L.</creator><creator>Rychetsky, Monir</creator><creator>Guttmann, Martin</creator><creator>Wernicke, Tim</creator><creator>Kneissl, Michael</creator><creator>Mounir, Christian</creator><creator>Schwarz, Ulrich</creator><creator>Glaab, Johannes</creator><creator>Netzel, Carsten</creator><creator>Brunner, Frank</creator><creator>Weyers, Markus</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8856-7914</orcidid><orcidid>https://orcid.org/0000-0002-5915-3365</orcidid><orcidid>https://orcid.org/0000-0002-1889-2188</orcidid></search><sort><creationdate>20161007</creationdate><title>Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes</title><author>Dinh, Duc V. ; Corbett, Brian ; Parbrook, Peter J. ; Koslow, Ingrid. L. ; Rychetsky, Monir ; Guttmann, Martin ; Wernicke, Tim ; Kneissl, Michael ; Mounir, Christian ; Schwarz, Ulrich ; Glaab, Johannes ; Netzel, Carsten ; Brunner, Frank ; Weyers, Markus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-c6fad0c9f63503cae5ab67dbfddac3d084f286fe9d271fb1a2f288143c153d023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Bulk density</topic><topic>Dislocation density</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Optical properties</topic><topic>Organic light emitting diodes</topic><topic>Photoluminescence</topic><topic>Quantum efficiency</topic><topic>Quantum wells</topic><topic>Sapphire</topic><topic>Stacking faults</topic><topic>Substrates</topic><topic>Threading dislocations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dinh, Duc V.</creatorcontrib><creatorcontrib>Corbett, Brian</creatorcontrib><creatorcontrib>Parbrook, Peter J.</creatorcontrib><creatorcontrib>Koslow, Ingrid. L.</creatorcontrib><creatorcontrib>Rychetsky, Monir</creatorcontrib><creatorcontrib>Guttmann, Martin</creatorcontrib><creatorcontrib>Wernicke, Tim</creatorcontrib><creatorcontrib>Kneissl, Michael</creatorcontrib><creatorcontrib>Mounir, Christian</creatorcontrib><creatorcontrib>Schwarz, Ulrich</creatorcontrib><creatorcontrib>Glaab, Johannes</creatorcontrib><creatorcontrib>Netzel, Carsten</creatorcontrib><creatorcontrib>Brunner, Frank</creatorcontrib><creatorcontrib>Weyers, Markus</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dinh, Duc V.</au><au>Corbett, Brian</au><au>Parbrook, Peter J.</au><au>Koslow, Ingrid. L.</au><au>Rychetsky, Monir</au><au>Guttmann, Martin</au><au>Wernicke, Tim</au><au>Kneissl, Michael</au><au>Mounir, Christian</au><au>Schwarz, Ulrich</au><au>Glaab, Johannes</au><au>Netzel, Carsten</au><au>Brunner, Frank</au><au>Weyers, Markus</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes</atitle><jtitle>Journal of applied physics</jtitle><date>2016-10-07</date><risdate>2016</risdate><volume>120</volume><issue>13</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (
11
2
¯
2
) GaN substrate (Bulk-GaN) and a low-cost large-size (
11
2
¯
2
) GaN template created on patterned (
10
1
¯
2
) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4963757</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-8856-7914</orcidid><orcidid>https://orcid.org/0000-0002-5915-3365</orcidid><orcidid>https://orcid.org/0000-0002-1889-2188</orcidid></addata></record> |
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| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_4963757 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Bulk density Dislocation density Gallium nitrides Indium gallium nitrides Light emitting diodes Optical properties Organic light emitting diodes Photoluminescence Quantum efficiency Quantum wells Sapphire Stacking faults Substrates Threading dislocations |
| title | Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes |
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