Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over th...
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| Veröffentlicht in: | Applied physics letters 2016-10, Vol.109 (14) |
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| container_title | Applied physics letters |
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| creator | Brauns, Matthias Ridderbos, Joost Li, Ang van der Wiel, Wilfred G. Bakkers, Erik P. A. M. Zwanenburg, Floris A. |
| description | We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. |
| doi_str_mv | 10.1063/1.4963715 |
| format | Article |
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| ispartof | Applied physics letters, 2016-10, Vol.109 (14) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Couplings Electrochemical potential Electrons Germanium Nanowires Quantum computing Quantum dots Silicon |
| title | Highly tuneable hole quantum dots in Ge-Si core-shell nanowires |
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