The effect of structural disorder on the secondary electron emission of graphite
The dependance of the secondary electron yield (SEY) on the degree of crystallinity of graphite has been investigated during the amorphization of a highly oriented pyrolytic graphite (HOPG) samples by means of Ar+ bombardment. Photoemission and Raman spectroscopies were used to follow the structural...
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| Veröffentlicht in: | AIP advances 2016-09, Vol.6 (9), p.095117-095117-6 |
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| creator | Gonzalez, L. A. Larciprete, R. Cimino, R. |
| description | The dependance of the secondary electron yield (SEY) on the degree of crystallinity of graphite has been investigated during the amorphization of a highly oriented pyrolytic graphite (HOPG) samples by means of Ar+ bombardment. Photoemission and Raman spectroscopies were used to follow the structural damage while the SEY curves were measured from very low energies up to 1000 eV. We found that the increase of lattice defects lowers the contribution of the
π
electrons in the valence band and loss spectra and smears out the intense modulations in the low energy secondary electron yield (LE-SEY) curve. Raman spectroscopy results showed that ion induced lattice amorphization is confined in a near-surface layer. The evolution of SEY curves was observed with the progressive Ar+ dosage after crystal damage as due to the modification of the electronic transport properties within the damaged near surface layer. |
| doi_str_mv | 10.1063/1.4963644 |
| format | Article |
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π
electrons in the valence band and loss spectra and smears out the intense modulations in the low energy secondary electron yield (LE-SEY) curve. Raman spectroscopy results showed that ion induced lattice amorphization is confined in a near-surface layer. The evolution of SEY curves was observed with the progressive Ar+ dosage after crystal damage as due to the modification of the electronic transport properties within the damaged near surface layer.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4963644</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Amorphization ; Bombardment ; Crystal defects ; Degree of crystallinity ; Electron emission ; Electron transport ; Electrons ; Graphite ; Microstructure ; Photoelectric emission ; Property damage ; Pyrolytic graphite ; Raman spectroscopy ; Spectrum analysis ; Structural damage ; Surface layers ; Valence band</subject><ispartof>AIP advances, 2016-09, Vol.6 (9), p.095117-095117-6</ispartof><rights>Author(s)</rights><rights>2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-3a67b79500b1247faa05128b35ae1d6c44e637da1b4865c4d635e0b89e9629363</citedby><cites>FETCH-LOGICAL-c428t-3a67b79500b1247faa05128b35ae1d6c44e637da1b4865c4d635e0b89e9629363</cites><orcidid>0000-0002-7584-1950</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,2101,27923,27924</link.rule.ids></links><search><creatorcontrib>Gonzalez, L. A.</creatorcontrib><creatorcontrib>Larciprete, R.</creatorcontrib><creatorcontrib>Cimino, R.</creatorcontrib><title>The effect of structural disorder on the secondary electron emission of graphite</title><title>AIP advances</title><description>The dependance of the secondary electron yield (SEY) on the degree of crystallinity of graphite has been investigated during the amorphization of a highly oriented pyrolytic graphite (HOPG) samples by means of Ar+ bombardment. Photoemission and Raman spectroscopies were used to follow the structural damage while the SEY curves were measured from very low energies up to 1000 eV. We found that the increase of lattice defects lowers the contribution of the
π
electrons in the valence band and loss spectra and smears out the intense modulations in the low energy secondary electron yield (LE-SEY) curve. Raman spectroscopy results showed that ion induced lattice amorphization is confined in a near-surface layer. The evolution of SEY curves was observed with the progressive Ar+ dosage after crystal damage as due to the modification of the electronic transport properties within the damaged near surface layer.</description><subject>Amorphization</subject><subject>Bombardment</subject><subject>Crystal defects</subject><subject>Degree of crystallinity</subject><subject>Electron emission</subject><subject>Electron transport</subject><subject>Electrons</subject><subject>Graphite</subject><subject>Microstructure</subject><subject>Photoelectric emission</subject><subject>Property damage</subject><subject>Pyrolytic graphite</subject><subject>Raman spectroscopy</subject><subject>Spectrum analysis</subject><subject>Structural damage</subject><subject>Surface layers</subject><subject>Valence band</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kE1LAzEQhhdRsNQe_AcLnhRa873ZoxQ_CgU91HPIJpN2y7ZZk1Tw3xttqYLgXGZ4eead4S2KS4wmGAl6iyesFlQwdlIMCOZyTAkRp7_m82IU4xrlYjVGkg2Kl8UKSnAOTCq9K2MKO5N2QXelbaMPFkLpt2XKUATjt1aHjxK6TIcsw6aNsc1D3lwG3a_aBBfFmdNdhNGhD4vXh_vF9Gk8f36cTe_mY8OITGOqRdVUNUeowYRVTmvEMZEN5RqwFYYxELSyGjdMCm6YFZQDamQNtSA1FXRYzPa-1uu16kO7ya8pr1v1LfiwVDqk1nSgBCcS80qDs44R09SNtBWqSMWJEIi67HW19-qDf9tBTGrtd2Gb31cEEywYlohk6npPmeBjDOCOVzFSX_krrA75Z_Zmz0bTJp1yRkf43YcfUPXW_Qf_df4EvKyRiQ</recordid><startdate>201609</startdate><enddate>201609</enddate><creator>Gonzalez, L. A.</creator><creator>Larciprete, R.</creator><creator>Cimino, R.</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-7584-1950</orcidid></search><sort><creationdate>201609</creationdate><title>The effect of structural disorder on the secondary electron emission of graphite</title><author>Gonzalez, L. A. ; Larciprete, R. ; Cimino, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-3a67b79500b1247faa05128b35ae1d6c44e637da1b4865c4d635e0b89e9629363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Amorphization</topic><topic>Bombardment</topic><topic>Crystal defects</topic><topic>Degree of crystallinity</topic><topic>Electron emission</topic><topic>Electron transport</topic><topic>Electrons</topic><topic>Graphite</topic><topic>Microstructure</topic><topic>Photoelectric emission</topic><topic>Property damage</topic><topic>Pyrolytic graphite</topic><topic>Raman spectroscopy</topic><topic>Spectrum analysis</topic><topic>Structural damage</topic><topic>Surface layers</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gonzalez, L. A.</creatorcontrib><creatorcontrib>Larciprete, R.</creatorcontrib><creatorcontrib>Cimino, R.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gonzalez, L. A.</au><au>Larciprete, R.</au><au>Cimino, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of structural disorder on the secondary electron emission of graphite</atitle><jtitle>AIP advances</jtitle><date>2016-09</date><risdate>2016</risdate><volume>6</volume><issue>9</issue><spage>095117</spage><epage>095117-6</epage><pages>095117-095117-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>The dependance of the secondary electron yield (SEY) on the degree of crystallinity of graphite has been investigated during the amorphization of a highly oriented pyrolytic graphite (HOPG) samples by means of Ar+ bombardment. Photoemission and Raman spectroscopies were used to follow the structural damage while the SEY curves were measured from very low energies up to 1000 eV. We found that the increase of lattice defects lowers the contribution of the
π
electrons in the valence band and loss spectra and smears out the intense modulations in the low energy secondary electron yield (LE-SEY) curve. Raman spectroscopy results showed that ion induced lattice amorphization is confined in a near-surface layer. The evolution of SEY curves was observed with the progressive Ar+ dosage after crystal damage as due to the modification of the electronic transport properties within the damaged near surface layer.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4963644</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-7584-1950</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Amorphization Bombardment Crystal defects Degree of crystallinity Electron emission Electron transport Electrons Graphite Microstructure Photoelectric emission Property damage Pyrolytic graphite Raman spectroscopy Spectrum analysis Structural damage Surface layers Valence band |
| title | The effect of structural disorder on the secondary electron emission of graphite |
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