Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n +Ge junction. The electron concentrati...

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Veröffentlicht in:	Applied physics letters 2016-09, Vol.109 (10)
Hauptverfasser:	Koike, Masahiro, Kamimuta, Yuuichi, Tezuka, Tsutomu, Yamabe, Kikuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Diodes Doping Electrical junctions Electrical properties Field effect transistors Germanides Germanium Intermetallic compounds MOSFETs Nickel compounds Semiconductor devices Tellurium
Online-Zugang:	Volltext
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