Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping
The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n +Ge junction. The electron concentrati...
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| Veröffentlicht in: | Applied physics letters 2016-09, Vol.109 (10) |
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| container_title | Applied physics letters |
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| creator | Koike, Masahiro Kamimuta, Yuuichi Tezuka, Tsutomu Yamabe, Kikuo |
| description | The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n
+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH. |
| doi_str_mv | 10.1063/1.4962436 |
| format | Article |
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+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4962436</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Diodes ; Doping ; Electrical junctions ; Electrical properties ; Field effect transistors ; Germanides ; Germanium ; Intermetallic compounds ; MOSFETs ; Nickel compounds ; Semiconductor devices ; Tellurium</subject><ispartof>Applied physics letters, 2016-09, Vol.109 (10)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-8cd3b95872d2228c2a88ebf4ba67d25bf0a5e874180804cc50185702a065dd963</citedby><cites>FETCH-LOGICAL-c406t-8cd3b95872d2228c2a88ebf4ba67d25bf0a5e874180804cc50185702a065dd963</cites><orcidid>0000-0003-0615-3908</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4962436$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4497,27903,27904,76130</link.rule.ids></links><search><creatorcontrib>Koike, Masahiro</creatorcontrib><creatorcontrib>Kamimuta, Yuuichi</creatorcontrib><creatorcontrib>Tezuka, Tsutomu</creatorcontrib><creatorcontrib>Yamabe, Kikuo</creatorcontrib><title>Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping</title><title>Applied physics letters</title><description>The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n
+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH.</description><subject>Applied physics</subject><subject>Diodes</subject><subject>Doping</subject><subject>Electrical junctions</subject><subject>Electrical properties</subject><subject>Field effect transistors</subject><subject>Germanides</subject><subject>Germanium</subject><subject>Intermetallic compounds</subject><subject>MOSFETs</subject><subject>Nickel compounds</subject><subject>Semiconductor devices</subject><subject>Tellurium</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0M1uEzEQB3ALgUQoHHiDkbhQ1G39sfZ6j6gqaaUKkFLOK689ThzS9WI7lfIePDAOqcSd02ik38xo_oS8Z_SSUSWu2GXbK94K9YIsGO26RjCmX5IFpVQ0qpfsNXmT87a2kguxIL9vdmhLCtbsYE5xxlQCZogelgg2HXIxuwxmcoDeVxmeEFZ2E0v5eYDRpBQwwQbDelOOQ1_DEq_q5HY_VRunDI_RBR_QwXiA738X2Y3Z2bjGCT6uLmCFFxATPOA52Ni4OIdp_Za88vUsvnuuZ-THl5uH69vm_tvy7vrzfWNbqkqjrRNjL3XHHedcW260xtG3o1Gd43L01EjUXcs01bS1VlKmZUe5oUo61ytxRj6c9tbPf-0xl2Eb92mqJwfOOJNStaKv6vykbIo5J_TDnMKjSYeB0eEY-sCG59Cr_XSy2YZijgn8H36K6R8cZufFH3UKjz8</recordid><startdate>20160905</startdate><enddate>20160905</enddate><creator>Koike, Masahiro</creator><creator>Kamimuta, Yuuichi</creator><creator>Tezuka, Tsutomu</creator><creator>Yamabe, Kikuo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0615-3908</orcidid></search><sort><creationdate>20160905</creationdate><title>Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping</title><author>Koike, Masahiro ; Kamimuta, Yuuichi ; Tezuka, Tsutomu ; Yamabe, Kikuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-8cd3b95872d2228c2a88ebf4ba67d25bf0a5e874180804cc50185702a065dd963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Diodes</topic><topic>Doping</topic><topic>Electrical junctions</topic><topic>Electrical properties</topic><topic>Field effect transistors</topic><topic>Germanides</topic><topic>Germanium</topic><topic>Intermetallic compounds</topic><topic>MOSFETs</topic><topic>Nickel compounds</topic><topic>Semiconductor devices</topic><topic>Tellurium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koike, Masahiro</creatorcontrib><creatorcontrib>Kamimuta, Yuuichi</creatorcontrib><creatorcontrib>Tezuka, Tsutomu</creatorcontrib><creatorcontrib>Yamabe, Kikuo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Koike, Masahiro</au><au>Kamimuta, Yuuichi</au><au>Tezuka, Tsutomu</au><au>Yamabe, Kikuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping</atitle><jtitle>Applied physics letters</jtitle><date>2016-09-05</date><risdate>2016</risdate><volume>109</volume><issue>10</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n
+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4962436</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0615-3908</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Diodes Doping Electrical junctions Electrical properties Field effect transistors Germanides Germanium Intermetallic compounds MOSFETs Nickel compounds Semiconductor devices Tellurium |
| title | Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping |
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