Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves
Vertical spin valve devices with junctions of single- and bi-layer graphene interlayers sandwiched with Fe20Ni80 (Permalloy) electrodes were fabricated by exploiting the direct growth of graphene on the Permalloy. The linear current-voltage characteristics indicated that ohmic contacts were realized...
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| Veröffentlicht in: | Applied physics letters 2016-08, Vol.109 (8) |
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| container_title | Applied physics letters |
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| creator | Entani, Shiro Seki, Takeshi Sakuraba, Yuya Yamamoto, Tatsuya Takahashi, Saburo Naramoto, Hiroshi Takanashi, Koki Sakai, Seiji |
| description | Vertical spin valve devices with junctions of single- and bi-layer graphene interlayers sandwiched with Fe20Ni80 (Permalloy) electrodes were fabricated by exploiting the direct growth of graphene on the Permalloy. The linear current-voltage characteristics indicated that ohmic contacts were realized at the interfaces. The systematic characterization revealed the significant modification of the electronic state of the interfacial graphene layer on the Permalloy surface, which indicates the strong interactions at the interface. The ohmic transport was attributable to the strong interface-interaction. The vertical resistivity of the graphene interlayer and the spin asymmetry coefficient at the graphene/Permalloy interface were obtained to be 0.13 Ω cm and 0.06, respectively. It was found that the strong interface interaction modifies the electronic structure and metallic properties in the vertical spin valve devices with bi-layer graphene as well as single-layer graphene. |
| doi_str_mv | 10.1063/1.4961669 |
| format | Article |
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The linear current-voltage characteristics indicated that ohmic contacts were realized at the interfaces. The systematic characterization revealed the significant modification of the electronic state of the interfacial graphene layer on the Permalloy surface, which indicates the strong interactions at the interface. The ohmic transport was attributable to the strong interface-interaction. The vertical resistivity of the graphene interlayer and the spin asymmetry coefficient at the graphene/Permalloy interface were obtained to be 0.13 Ω cm and 0.06, respectively. It was found that the strong interface interaction modifies the electronic structure and metallic properties in the vertical spin valve devices with bi-layer graphene as well as single-layer graphene.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4961669</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Contact resistance ; Current voltage characteristics ; Electron states ; Electronic structure ; Ferrous alloys ; Graphene ; Interlayers ; Magnetic alloys ; Magnetoresistance ; Magnetoresistivity ; Spin valves</subject><ispartof>Applied physics letters, 2016-08, Vol.109 (8)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). 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It was found that the strong interface interaction modifies the electronic structure and metallic properties in the vertical spin valve devices with bi-layer graphene as well as single-layer graphene.</description><subject>Applied physics</subject><subject>Contact resistance</subject><subject>Current voltage characteristics</subject><subject>Electron states</subject><subject>Electronic structure</subject><subject>Ferrous alloys</subject><subject>Graphene</subject><subject>Interlayers</subject><subject>Magnetic alloys</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Spin valves</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp90MFKAzEQBuAgCtbqwTdY8KSw3UySZrNHKVbFqhc9h5hM6pa6uybpgm_vSqseBE_DP3z8A0PIKdAJUMkLmIhKgpTVHhkBLcucA6h9MqKU8lxWUzgkRzGuhjhlnI_I3b1ZNpjagLGOyTQWM_QebcrqJpsjow-1osUymO4VGyy-N1mPIdXWrLPYDbA36x7jMTnwZh3xZDfH5Hl-9TS7yReP17ezy0VuecVTLj0KYE5YU1nLPCDlinMugNoX7qQTzDurynKI0nPpptIDrZSlpnRSScbH5Gzb24X2fYMx6VW7Cc1wUjNgIBVTQgzqfKtsaGMM6HUX6jcTPjRQ_fUrDXr3q8FebG20dTKpbpsf3LfhF-rO-f_w3-ZPBkN1qw</recordid><startdate>20160822</startdate><enddate>20160822</enddate><creator>Entani, Shiro</creator><creator>Seki, Takeshi</creator><creator>Sakuraba, Yuya</creator><creator>Yamamoto, Tatsuya</creator><creator>Takahashi, Saburo</creator><creator>Naramoto, Hiroshi</creator><creator>Takanashi, Koki</creator><creator>Sakai, Seiji</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160822</creationdate><title>Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves</title><author>Entani, Shiro ; Seki, Takeshi ; Sakuraba, Yuya ; Yamamoto, Tatsuya ; Takahashi, Saburo ; Naramoto, Hiroshi ; Takanashi, Koki ; Sakai, Seiji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-6fe412d4ca9cc2f1e038333410cb3d6d42fdc8770cb6f36d56f1098c0a7d68623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Contact resistance</topic><topic>Current voltage characteristics</topic><topic>Electron states</topic><topic>Electronic structure</topic><topic>Ferrous alloys</topic><topic>Graphene</topic><topic>Interlayers</topic><topic>Magnetic alloys</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Spin valves</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Entani, Shiro</creatorcontrib><creatorcontrib>Seki, Takeshi</creatorcontrib><creatorcontrib>Sakuraba, Yuya</creatorcontrib><creatorcontrib>Yamamoto, Tatsuya</creatorcontrib><creatorcontrib>Takahashi, Saburo</creatorcontrib><creatorcontrib>Naramoto, Hiroshi</creatorcontrib><creatorcontrib>Takanashi, Koki</creatorcontrib><creatorcontrib>Sakai, Seiji</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Entani, Shiro</au><au>Seki, Takeshi</au><au>Sakuraba, Yuya</au><au>Yamamoto, Tatsuya</au><au>Takahashi, Saburo</au><au>Naramoto, Hiroshi</au><au>Takanashi, Koki</au><au>Sakai, Seiji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves</atitle><jtitle>Applied physics letters</jtitle><date>2016-08-22</date><risdate>2016</risdate><volume>109</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Vertical spin valve devices with junctions of single- and bi-layer graphene interlayers sandwiched with Fe20Ni80 (Permalloy) electrodes were fabricated by exploiting the direct growth of graphene on the Permalloy. 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| ispartof | Applied physics letters, 2016-08, Vol.109 (8) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Contact resistance Current voltage characteristics Electron states Electronic structure Ferrous alloys Graphene Interlayers Magnetic alloys Magnetoresistance Magnetoresistivity Spin valves |
| title | Magnetoresistance effect in Fe20Ni80/graphene/Fe20Ni80 vertical spin valves |
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