Characteristics of InGaAsBi with various lattice mismatches on InP substrate
To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy l...
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| Veröffentlicht in: | AIP advances 2016-07, Vol.6 (7) |
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| container_title | AIP advances |
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| creator | Chen, X. Y. Gu, Y. Zhang, Y. G. Xi, S. P. Du, B. Ma, Y. J. Ji, W. Y. Shi, Y. H. |
| description | To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In0.5Ga0.5As0.987Bi0.013, which is fairly low compared with that of In0.5Ga0.5As. |
| doi_str_mv | 10.1063/1.4959896 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4959896</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121706496</sourcerecordid><originalsourceid>FETCH-LOGICAL-c390t-aa8faf50cc319c135be9b6ad26b9bb07074a77b3e5287fbfbee93bfbab9d31cf3</originalsourceid><addsrcrecordid>eNqd0EtLAzEQAOAgCpbag_9gwZPC1mSTfeRYF62Fgh70HCZpwqa0m5pkK_57U1qoZ-cyc_iYF0K3BE8JrugjmTJe8oZXF2hUkLLJaVFUl3_qazQJYY1TME5ww0Zo2XbgQUXtbYhWhcyZbNHPYRaebPZtY5ftwVs3hGwDMQGdbW3YQlSdTrZP9j0LgwzRQ9Q36MrAJujJKY_R58vzR_uaL9_mi3a2zBXlOOYAjQFTYqUo4YrQUmouK1gVleRS4hrXDOpaUl0WTW2kkVpzmhJIvqJEGTpGd8e-Lu0sgrJRq065vtcqinQmIYzxs9p59zXoEMXaDb5Pi4mCFKTGFeNVUvdHpbwLwWsjdt5uwf8IgsXhq4KI01eTfTjaw0iI1vX_w3vnz1DsVob-AmkchcQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121706496</pqid></control><display><type>article</type><title>Characteristics of InGaAsBi with various lattice mismatches on InP substrate</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Chen, X. Y. ; Gu, Y. ; Zhang, Y. G. ; Xi, S. P. ; Du, B. ; Ma, Y. J. ; Ji, W. Y. ; Shi, Y. H.</creator><creatorcontrib>Chen, X. Y. ; Gu, Y. ; Zhang, Y. G. ; Xi, S. P. ; Du, B. ; Ma, Y. J. ; Ji, W. Y. ; Shi, Y. H.</creatorcontrib><description>To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In0.5Ga0.5As0.987Bi0.013, which is fairly low compared with that of In0.5Ga0.5As.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4959896</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ABSORPTION ; ARSENIC COMPOUNDS ; Bismuth ; BISMUTH COMPOUNDS ; COMPARATIVE EVALUATIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL DEFECTS ; CRYSTAL LATTICES ; CRYSTALS ; Diffraction ; EXCITATION ; GALLIUM COMPOUNDS ; HALL EFFECT ; INDIUM COMPOUNDS ; INDIUM PHOSPHIDES ; LATTICE PARAMETERS ; Optical properties ; OPTOELECTRONIC DEVICES ; PHOTOLUMINESCENCE ; QUATERNARY ALLOY SYSTEMS ; SUBSTRATES ; TEMPERATURE DEPENDENCE ; X-RAY DIFFRACTION</subject><ispartof>AIP advances, 2016-07, Vol.6 (7)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-aa8faf50cc319c135be9b6ad26b9bb07074a77b3e5287fbfbee93bfbab9d31cf3</citedby><cites>FETCH-LOGICAL-c390t-aa8faf50cc319c135be9b6ad26b9bb07074a77b3e5287fbfbee93bfbab9d31cf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,860,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22611449$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, X. Y.</creatorcontrib><creatorcontrib>Gu, Y.</creatorcontrib><creatorcontrib>Zhang, Y. G.</creatorcontrib><creatorcontrib>Xi, S. P.</creatorcontrib><creatorcontrib>Du, B.</creatorcontrib><creatorcontrib>Ma, Y. J.</creatorcontrib><creatorcontrib>Ji, W. Y.</creatorcontrib><creatorcontrib>Shi, Y. H.</creatorcontrib><title>Characteristics of InGaAsBi with various lattice mismatches on InP substrate</title><title>AIP advances</title><description>To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In0.5Ga0.5As0.987Bi0.013, which is fairly low compared with that of In0.5Ga0.5As.</description><subject>ABSORPTION</subject><subject>ARSENIC COMPOUNDS</subject><subject>Bismuth</subject><subject>BISMUTH COMPOUNDS</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL DEFECTS</subject><subject>CRYSTAL LATTICES</subject><subject>CRYSTALS</subject><subject>Diffraction</subject><subject>EXCITATION</subject><subject>GALLIUM COMPOUNDS</subject><subject>HALL EFFECT</subject><subject>INDIUM COMPOUNDS</subject><subject>INDIUM PHOSPHIDES</subject><subject>LATTICE PARAMETERS</subject><subject>Optical properties</subject><subject>OPTOELECTRONIC DEVICES</subject><subject>PHOTOLUMINESCENCE</subject><subject>QUATERNARY ALLOY SYSTEMS</subject><subject>SUBSTRATES</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>X-RAY DIFFRACTION</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0EtLAzEQAOAgCpbag_9gwZPC1mSTfeRYF62Fgh70HCZpwqa0m5pkK_57U1qoZ-cyc_iYF0K3BE8JrugjmTJe8oZXF2hUkLLJaVFUl3_qazQJYY1TME5ww0Zo2XbgQUXtbYhWhcyZbNHPYRaebPZtY5ftwVs3hGwDMQGdbW3YQlSdTrZP9j0LgwzRQ9Q36MrAJujJKY_R58vzR_uaL9_mi3a2zBXlOOYAjQFTYqUo4YrQUmouK1gVleRS4hrXDOpaUl0WTW2kkVpzmhJIvqJEGTpGd8e-Lu0sgrJRq065vtcqinQmIYzxs9p59zXoEMXaDb5Pi4mCFKTGFeNVUvdHpbwLwWsjdt5uwf8IgsXhq4KI01eTfTjaw0iI1vX_w3vnz1DsVob-AmkchcQ</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Chen, X. Y.</creator><creator>Gu, Y.</creator><creator>Zhang, Y. G.</creator><creator>Xi, S. P.</creator><creator>Du, B.</creator><creator>Ma, Y. J.</creator><creator>Ji, W. Y.</creator><creator>Shi, Y. H.</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20160701</creationdate><title>Characteristics of InGaAsBi with various lattice mismatches on InP substrate</title><author>Chen, X. Y. ; Gu, Y. ; Zhang, Y. G. ; Xi, S. P. ; Du, B. ; Ma, Y. J. ; Ji, W. Y. ; Shi, Y. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-aa8faf50cc319c135be9b6ad26b9bb07074a77b3e5287fbfbee93bfbab9d31cf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ABSORPTION</topic><topic>ARSENIC COMPOUNDS</topic><topic>Bismuth</topic><topic>BISMUTH COMPOUNDS</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL DEFECTS</topic><topic>CRYSTAL LATTICES</topic><topic>CRYSTALS</topic><topic>Diffraction</topic><topic>EXCITATION</topic><topic>GALLIUM COMPOUNDS</topic><topic>HALL EFFECT</topic><topic>INDIUM COMPOUNDS</topic><topic>INDIUM PHOSPHIDES</topic><topic>LATTICE PARAMETERS</topic><topic>Optical properties</topic><topic>OPTOELECTRONIC DEVICES</topic><topic>PHOTOLUMINESCENCE</topic><topic>QUATERNARY ALLOY SYSTEMS</topic><topic>SUBSTRATES</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, X. Y.</creatorcontrib><creatorcontrib>Gu, Y.</creatorcontrib><creatorcontrib>Zhang, Y. G.</creatorcontrib><creatorcontrib>Xi, S. P.</creatorcontrib><creatorcontrib>Du, B.</creatorcontrib><creatorcontrib>Ma, Y. J.</creatorcontrib><creatorcontrib>Ji, W. Y.</creatorcontrib><creatorcontrib>Shi, Y. H.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, X. Y.</au><au>Gu, Y.</au><au>Zhang, Y. G.</au><au>Xi, S. P.</au><au>Du, B.</au><au>Ma, Y. J.</au><au>Ji, W. Y.</au><au>Shi, Y. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of InGaAsBi with various lattice mismatches on InP substrate</atitle><jtitle>AIP advances</jtitle><date>2016-07-01</date><risdate>2016</risdate><volume>6</volume><issue>7</issue><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In0.5Ga0.5As0.987Bi0.013, which is fairly low compared with that of In0.5Ga0.5As.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4959896</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | ABSORPTION ARSENIC COMPOUNDS Bismuth BISMUTH COMPOUNDS COMPARATIVE EVALUATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS CRYSTAL LATTICES CRYSTALS Diffraction EXCITATION GALLIUM COMPOUNDS HALL EFFECT INDIUM COMPOUNDS INDIUM PHOSPHIDES LATTICE PARAMETERS Optical properties OPTOELECTRONIC DEVICES PHOTOLUMINESCENCE QUATERNARY ALLOY SYSTEMS SUBSTRATES TEMPERATURE DEPENDENCE X-RAY DIFFRACTION |
| title | Characteristics of InGaAsBi with various lattice mismatches on InP substrate |
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