“Virtual IED sensor” at an rf-biased electrode in low-pressure plasma

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual...

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Veröffentlicht in:Physics of plasmas 2016-07, Vol.23 (7)
Hauptverfasser: Bogdanova, M. A., Lopaev, D. V., Zyryanov, S. M., Rakhimov, A. T.
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Sprache:eng
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