Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth
This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consum...
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| Veröffentlicht in: | Journal of applied physics 2016-07, Vol.120 (4) |
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| container_title | Journal of applied physics |
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| creator | Englhard, M. Klemp, C. Behringer, M. Rudolph, A. Skibitzki, O. Zaumseil, P. Schroeder, T. |
| description | This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In0.5(Ga0.45Al0.55)0.5P (Q55) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production. |
| doi_str_mv | 10.1063/1.4955333 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4955333</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121707683</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-f616fa835ec6aa8e5d11524ea1d8f12311fb304fd3647609c93072ae78fdfc323</originalsourceid><addsrcrecordid>eNqd0MtOAyEUBmBiNLFeFr4BiStNpnKgDMzS1FpNmuhC14Qy4GCmwwjU29M7tSa6dnU237n9CJ0AGQMp2QWMJxXnjLEdNAIiq0JwTnbRiBAKhaxEtY8OUnomBECyaoTStNFRm2yj_9TZhw4Hh6M1rfYrW-O5vkw4rZcpR51twrqrse9ebcr-6Q9fJ4tdiDg3vsPOtyt82w2t7T1ezK6w7X3W7163-CmGt9wcoT2n22SPf-oheryePUxvisXd_HZ6uSgM4zwXroTSacm4NaXW0vIagNOJ1VBLB5QBuCUjE1ezciJKUpmKEUG1FdLVzjDKDtHpdm4YzlXJ-GxNY0LXWZMVpbwSQpa_qo_hZT18pp7DOnbDYYoCBUFEKdmgzrbKxJBStE710a90_FBA1CZ5Beon-cGeb-1m5XdK_8OvIf5C1deOfQFVfpGE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121707683</pqid></control><display><type>article</type><title>Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Englhard, M. ; Klemp, C. ; Behringer, M. ; Rudolph, A. ; Skibitzki, O. ; Zaumseil, P. ; Schroeder, T.</creator><creatorcontrib>Englhard, M. ; Klemp, C. ; Behringer, M. ; Rudolph, A. ; Skibitzki, O. ; Zaumseil, P. ; Schroeder, T.</creatorcontrib><description>This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In0.5(Ga0.45Al0.55)0.5P (Q55) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4955333</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; ARSENIC ; ATOMIC FORCE MICROSCOPY ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; CRYSTAL STRUCTURE ; CRYSTALS ; Epitaxial growth ; Epitaxial layers ; EPITAXY ; Gallium arsenide ; GALLIUM ARSENIDES ; GRINDING ; Investigations ; LAYERS ; LIGHT EMITTING DIODES ; Microscopes ; POLISHING ; Reclamation ; Reuse ; Scanning electron microscopy ; Scanning transmission electron microscopy ; SEMICONDUCTOR MATERIALS ; SUBSTRATES ; SURFACES ; THIN FILMS ; TRANSMISSION ELECTRON MICROSCOPY ; X RADIATION ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2016-07, Vol.120 (4)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-f616fa835ec6aa8e5d11524ea1d8f12311fb304fd3647609c93072ae78fdfc323</citedby><cites>FETCH-LOGICAL-c355t-f616fa835ec6aa8e5d11524ea1d8f12311fb304fd3647609c93072ae78fdfc323</cites><orcidid>0000-0001-8411-9372</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4955333$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,315,781,785,795,886,4513,27929,27930,76389</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22597786$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Englhard, M.</creatorcontrib><creatorcontrib>Klemp, C.</creatorcontrib><creatorcontrib>Behringer, M.</creatorcontrib><creatorcontrib>Rudolph, A.</creatorcontrib><creatorcontrib>Skibitzki, O.</creatorcontrib><creatorcontrib>Zaumseil, P.</creatorcontrib><creatorcontrib>Schroeder, T.</creatorcontrib><title>Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth</title><title>Journal of applied physics</title><description>This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In0.5(Ga0.45Al0.55)0.5P (Q55) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.</description><subject>Applied physics</subject><subject>ARSENIC</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALS</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>EPITAXY</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>GRINDING</subject><subject>Investigations</subject><subject>LAYERS</subject><subject>LIGHT EMITTING DIODES</subject><subject>Microscopes</subject><subject>POLISHING</subject><subject>Reclamation</subject><subject>Reuse</subject><subject>Scanning electron microscopy</subject><subject>Scanning transmission electron microscopy</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>THIN FILMS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>X RADIATION</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0MtOAyEUBmBiNLFeFr4BiStNpnKgDMzS1FpNmuhC14Qy4GCmwwjU29M7tSa6dnU237n9CJ0AGQMp2QWMJxXnjLEdNAIiq0JwTnbRiBAKhaxEtY8OUnomBECyaoTStNFRm2yj_9TZhw4Hh6M1rfYrW-O5vkw4rZcpR51twrqrse9ebcr-6Q9fJ4tdiDg3vsPOtyt82w2t7T1ezK6w7X3W7163-CmGt9wcoT2n22SPf-oheryePUxvisXd_HZ6uSgM4zwXroTSacm4NaXW0vIagNOJ1VBLB5QBuCUjE1ezciJKUpmKEUG1FdLVzjDKDtHpdm4YzlXJ-GxNY0LXWZMVpbwSQpa_qo_hZT18pp7DOnbDYYoCBUFEKdmgzrbKxJBStE710a90_FBA1CZ5Beon-cGeb-1m5XdK_8OvIf5C1deOfQFVfpGE</recordid><startdate>20160728</startdate><enddate>20160728</enddate><creator>Englhard, M.</creator><creator>Klemp, C.</creator><creator>Behringer, M.</creator><creator>Rudolph, A.</creator><creator>Skibitzki, O.</creator><creator>Zaumseil, P.</creator><creator>Schroeder, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-8411-9372</orcidid></search><sort><creationdate>20160728</creationdate><title>Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth</title><author>Englhard, M. ; Klemp, C. ; Behringer, M. ; Rudolph, A. ; Skibitzki, O. ; Zaumseil, P. ; Schroeder, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-f616fa835ec6aa8e5d11524ea1d8f12311fb304fd3647609c93072ae78fdfc323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>ARSENIC</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>EPITAXY</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>GRINDING</topic><topic>Investigations</topic><topic>LAYERS</topic><topic>LIGHT EMITTING DIODES</topic><topic>Microscopes</topic><topic>POLISHING</topic><topic>Reclamation</topic><topic>Reuse</topic><topic>Scanning electron microscopy</topic><topic>Scanning transmission electron microscopy</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>THIN FILMS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>X RADIATION</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Englhard, M.</creatorcontrib><creatorcontrib>Klemp, C.</creatorcontrib><creatorcontrib>Behringer, M.</creatorcontrib><creatorcontrib>Rudolph, A.</creatorcontrib><creatorcontrib>Skibitzki, O.</creatorcontrib><creatorcontrib>Zaumseil, P.</creatorcontrib><creatorcontrib>Schroeder, T.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Englhard, M.</au><au>Klemp, C.</au><au>Behringer, M.</au><au>Rudolph, A.</au><au>Skibitzki, O.</au><au>Zaumseil, P.</au><au>Schroeder, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth</atitle><jtitle>Journal of applied physics</jtitle><date>2016-07-28</date><risdate>2016</risdate><volume>120</volume><issue>4</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In0.5(Ga0.45Al0.55)0.5P (Q55) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4955333</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-8411-9372</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics ARSENIC ATOMIC FORCE MICROSCOPY CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CRYSTAL STRUCTURE CRYSTALS Epitaxial growth Epitaxial layers EPITAXY Gallium arsenide GALLIUM ARSENIDES GRINDING Investigations LAYERS LIGHT EMITTING DIODES Microscopes POLISHING Reclamation Reuse Scanning electron microscopy Scanning transmission electron microscopy SEMICONDUCTOR MATERIALS SUBSTRATES SURFACES THIN FILMS TRANSMISSION ELECTRON MICROSCOPY X RADIATION X-RAY DIFFRACTION |
| title | Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth |
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