Trapped charge densities in Al2O3-based silicon surface passivation layers

In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respe...

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Veröffentlicht in:	Journal of applied physics 2016-06, Vol.119 (21)
Hauptverfasser:	Jordan, Paul M., Simon, Daniel K., Mikolajick, Thomas, Dirnstorfer, Ingo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied physics Atomic layer epitaxy Charge density Charge injection Electric potential Hafnium oxide Interlayers Passivity Photovoltaic cells Silicon dioxide Silicon substrates Solar cells Stacks Thickness Trapped charge
Online-Zugang:	Volltext
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