Design of high-performance memristor cell using W-implanted SiO2 films
Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. Because of its excellent dielectric properties, SiO2 was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insula...
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| Veröffentlicht in: | Applied physics letters 2016-04, Vol.108 (15) |
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| container_issue | 15 |
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| container_title | Applied physics letters |
| container_volume | 108 |
| creator | Li, Wenqing Liu, Xinqiang Wang, Yongqiang Dai, Zhigao Wu, Wei Cheng, Li Zhang, Yupeng Liu, Qi Xiao, Xiangheng Jiang, Changzhong |
| description | Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. Because of its excellent dielectric properties, SiO2 was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insulator-semiconductor structure, showing an excellent resistance switching performance (the ON/OFF ratio is close to ∼106). In addition, this sandwich structure device shows a forming-free resistance switching behavior. The overall device performance of the SiO2-based memristor has the potential to open up a new avenue to a large-scale high-performance resistive random access memory, which could significantly impact their existing applications. |
| doi_str_mv | 10.1063/1.4945982 |
| format | Article |
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Because of its excellent dielectric properties, SiO2 was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insulator-semiconductor structure, showing an excellent resistance switching performance (the ON/OFF ratio is close to ∼106). In addition, this sandwich structure device shows a forming-free resistance switching behavior. The overall device performance of the SiO2-based memristor has the potential to open up a new avenue to a large-scale high-performance resistive random access memory, which could significantly impact their existing applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4945982</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Composite materials ; Dielectric properties ; Insulators ; Memristors ; MIS (semiconductors) ; Random access memory ; Sandwich structures ; Silicon dioxide ; Switching</subject><ispartof>Applied physics letters, 2016-04, Vol.108 (15)</ispartof><rights>AIP Publishing LLC</rights><rights>2016 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-c541fb7ebf01ea56d6705a04918dfa58318a762a141cae3f477943c898011d363</citedby><cites>FETCH-LOGICAL-c327t-c541fb7ebf01ea56d6705a04918dfa58318a762a141cae3f477943c898011d363</cites><orcidid>0000-0001-5431-2120</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4945982$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4511,27923,27924,76255</link.rule.ids></links><search><creatorcontrib>Li, Wenqing</creatorcontrib><creatorcontrib>Liu, Xinqiang</creatorcontrib><creatorcontrib>Wang, Yongqiang</creatorcontrib><creatorcontrib>Dai, Zhigao</creatorcontrib><creatorcontrib>Wu, Wei</creatorcontrib><creatorcontrib>Cheng, Li</creatorcontrib><creatorcontrib>Zhang, Yupeng</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Xiao, Xiangheng</creatorcontrib><creatorcontrib>Jiang, Changzhong</creatorcontrib><title>Design of high-performance memristor cell using W-implanted SiO2 films</title><title>Applied physics letters</title><description>Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. Because of its excellent dielectric properties, SiO2 was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insulator-semiconductor structure, showing an excellent resistance switching performance (the ON/OFF ratio is close to ∼106). In addition, this sandwich structure device shows a forming-free resistance switching behavior. The overall device performance of the SiO2-based memristor has the potential to open up a new avenue to a large-scale high-performance resistive random access memory, which could significantly impact their existing applications.</description><subject>Applied physics</subject><subject>Composite materials</subject><subject>Dielectric properties</subject><subject>Insulators</subject><subject>Memristors</subject><subject>MIS (semiconductors)</subject><subject>Random access memory</subject><subject>Sandwich structures</subject><subject>Silicon dioxide</subject><subject>Switching</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0EFLwzAYBuAgCs7pwX8Q8KTQmS9pmuQo6lQY7KDiMWRpsmW0TU06wX9vZQPvnj4-eHhfeBG6BDIDUrFbmJWq5ErSIzQBIkTBAOQxmhBCWFEpDqfoLOft-HLK2ATNH1wO6w5HjzdhvSl6l3xMremsw61rU8hDTNi6psG7HLo1_ihC2zemG1yNX8OSYh-aNp-jE2-a7C4Od4re549v98_FYvn0cn-3KCyjYigsL8GvhFt5As7wqq4E4YaUCmTtDZcMpBEVNVCCNY75UghVMiuVJAA1q9gUXe1z-xQ_dy4Peht3qRsrNQUKko4ZalTXe2VTzDk5r_sUWpO-NRD9O5MGfZhptDd7m20YzBBi9z_8FdMf1H3t2Q_dKXRE</recordid><startdate>20160411</startdate><enddate>20160411</enddate><creator>Li, Wenqing</creator><creator>Liu, Xinqiang</creator><creator>Wang, Yongqiang</creator><creator>Dai, Zhigao</creator><creator>Wu, Wei</creator><creator>Cheng, Li</creator><creator>Zhang, Yupeng</creator><creator>Liu, Qi</creator><creator>Xiao, Xiangheng</creator><creator>Jiang, Changzhong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5431-2120</orcidid></search><sort><creationdate>20160411</creationdate><title>Design of high-performance memristor cell using W-implanted SiO2 films</title><author>Li, Wenqing ; Liu, Xinqiang ; Wang, Yongqiang ; Dai, Zhigao ; Wu, Wei ; Cheng, Li ; Zhang, Yupeng ; Liu, Qi ; Xiao, Xiangheng ; Jiang, Changzhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-c541fb7ebf01ea56d6705a04918dfa58318a762a141cae3f477943c898011d363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Composite materials</topic><topic>Dielectric properties</topic><topic>Insulators</topic><topic>Memristors</topic><topic>MIS (semiconductors)</topic><topic>Random access memory</topic><topic>Sandwich structures</topic><topic>Silicon dioxide</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Wenqing</creatorcontrib><creatorcontrib>Liu, Xinqiang</creatorcontrib><creatorcontrib>Wang, Yongqiang</creatorcontrib><creatorcontrib>Dai, Zhigao</creatorcontrib><creatorcontrib>Wu, Wei</creatorcontrib><creatorcontrib>Cheng, Li</creatorcontrib><creatorcontrib>Zhang, Yupeng</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Xiao, Xiangheng</creatorcontrib><creatorcontrib>Jiang, Changzhong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Wenqing</au><au>Liu, Xinqiang</au><au>Wang, Yongqiang</au><au>Dai, Zhigao</au><au>Wu, Wei</au><au>Cheng, Li</au><au>Zhang, Yupeng</au><au>Liu, Qi</au><au>Xiao, Xiangheng</au><au>Jiang, Changzhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of high-performance memristor cell using W-implanted SiO2 films</atitle><jtitle>Applied physics letters</jtitle><date>2016-04-11</date><risdate>2016</risdate><volume>108</volume><issue>15</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. 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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2016-04, Vol.108 (15) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Composite materials Dielectric properties Insulators Memristors MIS (semiconductors) Random access memory Sandwich structures Silicon dioxide Switching |
| title | Design of high-performance memristor cell using W-implanted SiO2 films |
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