Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy

InAs/InAs1−xSbx type II superlattices designed for mid-wavelength infrared photo-detection have been studied using several electron microscopy methods, with specific attention directed towards interface chemical diffusion caused by Sb segregation. Reciprocal-space image analysis using the geometric...

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Veröffentlicht in:	Journal of applied physics 2016-03, Vol.119 (9)
Hauptverfasser:	Lu, Jing, Luna, Esperanza, Aoki, Toshihiro, Steenbergen, Elizabeth H., Zhang, Yong-Hang, Smith, David J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Applied physics Chemical diffusion Electron energy Electron energy loss spectroscopy Epitaxial growth Image analysis Microscopy Molecular beam epitaxy Organic chemistry Skewed distributions Superlattices
Online-Zugang:	Volltext
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