A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (...

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Veröffentlicht in:	Journal of applied physics 2016-01, Vol.119 (4)
Hauptverfasser:	Musolino, M., van Treeck, D., Tahraoui, A., Scarparo, L., De Santi, C., Meneghini, M., Zanoni, E., Geelhaar, L., Riechert, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CAPACITANCE Charge transport CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Conduction bands DEEP LEVEL TRANSIENT SPECTROSCOPY ELECTRIC CONDUCTIVITY Electron emission Electron traps Epitaxial growth GALLIUM NITRIDES LEAKAGE CURRENT LIGHT EMITTING DIODES MOLECULAR BEAM EPITAXY NANOWIRES Organic light emitting diodes P-i-n junctions Silicon substrates TEMPERATURE DEPENDENCE
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