Wide-angle, polarization-independent ultrathin broadband visible absorbers
A capability of absorbing a broad range of visible lights is essential to boost the performance of various applications, such as photovoltaics (PV), photodetectors, and thermal emitters. Here, we present an angle-insensitive, polarization-independent ultrathin (
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| Veröffentlicht in: | Applied physics letters 2016-01, Vol.108 (3) |
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| container_title | Applied physics letters |
| container_volume | 108 |
| creator | Lee, Kyu-Tae Ji, Chengang Guo, L. Jay |
| description | A capability of absorbing a broad range of visible lights is essential to boost the performance of various applications, such as photovoltaics (PV), photodetectors, and thermal emitters. Here, we present an angle-insensitive, polarization-independent ultrathin ( |
| doi_str_mv | 10.1063/1.4939969 |
| format | Article |
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Jay</creator><creatorcontrib>Lee, Kyu-Tae ; Ji, Chengang ; Guo, L. Jay</creatorcontrib><description>A capability of absorbing a broad range of visible lights is essential to boost the performance of various applications, such as photovoltaics (PV), photodetectors, and thermal emitters. Here, we present an angle-insensitive, polarization-independent ultrathin (<150 nm) broadband absorber in the visible regime exploiting strong interference behaviors in highly absorbing semiconductor materials. A proposed structure simply has four layers composed of two stacks of a metal and a semiconductor demonstrating a remarkably enhanced absorption property as compared with the device without a top semiconductor film. This is attributed to multi-cavity resonance effects in each cavity, which is obviously elucidated with phase calculations and electric field distributions. The maximum absorption efficiency of the device is 95.5% at a resonance and its absorption characteristic can be maintained over a wide angle of incidence up to ±70° regardless of the incident light polarization. Finally, we investigate how our approach can be utilized to achieve a tandem PV cell with high efficiency. Our strategy can be applied to other material systems and can be useful in diverse applications, including thermal emitters and PV.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4939969</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorbers ; Absorption ; Applied physics ; Broadband ; Emitters ; Incidence angle ; Incident light ; Photovoltaic cells ; Polarization ; Semiconductor materials ; Solar cells</subject><ispartof>Applied physics letters, 2016-01, Vol.108 (3)</ispartof><rights>AIP Publishing LLC</rights><rights>2016 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c498t-2fb7c7345bf0026f89af9dcb6cfc8378d77e0830c2755e8f2c47cc2af999d7d63</citedby><cites>FETCH-LOGICAL-c498t-2fb7c7345bf0026f89af9dcb6cfc8378d77e0830c2755e8f2c47cc2af999d7d63</cites><orcidid>0000-0002-6658-9853</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4939969$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Lee, Kyu-Tae</creatorcontrib><creatorcontrib>Ji, Chengang</creatorcontrib><creatorcontrib>Guo, L. Jay</creatorcontrib><title>Wide-angle, polarization-independent ultrathin broadband visible absorbers</title><title>Applied physics letters</title><description>A capability of absorbing a broad range of visible lights is essential to boost the performance of various applications, such as photovoltaics (PV), photodetectors, and thermal emitters. Here, we present an angle-insensitive, polarization-independent ultrathin (<150 nm) broadband absorber in the visible regime exploiting strong interference behaviors in highly absorbing semiconductor materials. A proposed structure simply has four layers composed of two stacks of a metal and a semiconductor demonstrating a remarkably enhanced absorption property as compared with the device without a top semiconductor film. This is attributed to multi-cavity resonance effects in each cavity, which is obviously elucidated with phase calculations and electric field distributions. The maximum absorption efficiency of the device is 95.5% at a resonance and its absorption characteristic can be maintained over a wide angle of incidence up to ±70° regardless of the incident light polarization. Finally, we investigate how our approach can be utilized to achieve a tandem PV cell with high efficiency. Our strategy can be applied to other material systems and can be useful in diverse applications, including thermal emitters and PV.</description><subject>Absorbers</subject><subject>Absorption</subject><subject>Applied physics</subject><subject>Broadband</subject><subject>Emitters</subject><subject>Incidence angle</subject><subject>Incident light</subject><subject>Photovoltaic cells</subject><subject>Polarization</subject><subject>Semiconductor materials</subject><subject>Solar cells</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0EtLAzEQB_AgCtbqwW-w4Elxax67m81RSn1R8KJ4DHlqypqsSVrQT2-0Be9eZhj4McP8AThFcIZgR67QrGGEsY7tgQmClNYEoX4fTCCEpO5Yiw7BUUqrMraYkAl4eHHa1MK_DuayGsMgovsS2QVfO6_NaErxuVoPOYr85nwlYxBaCq-rjUtODqYSMoUoTUzH4MCKIZmTXZ-C55vF0_yuXj7e3s-vl7VqWJ9rbCVVlDSttBDizvZMWKaV7JRVPaG9ptTAnkCFadua3mLVUKVwQYxpqjsyBWfbvWMMH2uTMl-FdfTlJMcII1Zeo7io861SMaQUjeVjdO8ifnIE-U9UHPFdVMVebG1SLv9-_z-8CfEP8lFb8g1ibXg5</recordid><startdate>20160118</startdate><enddate>20160118</enddate><creator>Lee, Kyu-Tae</creator><creator>Ji, Chengang</creator><creator>Guo, L. 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Here, we present an angle-insensitive, polarization-independent ultrathin (<150 nm) broadband absorber in the visible regime exploiting strong interference behaviors in highly absorbing semiconductor materials. A proposed structure simply has four layers composed of two stacks of a metal and a semiconductor demonstrating a remarkably enhanced absorption property as compared with the device without a top semiconductor film. This is attributed to multi-cavity resonance effects in each cavity, which is obviously elucidated with phase calculations and electric field distributions. The maximum absorption efficiency of the device is 95.5% at a resonance and its absorption characteristic can be maintained over a wide angle of incidence up to ±70° regardless of the incident light polarization. Finally, we investigate how our approach can be utilized to achieve a tandem PV cell with high efficiency. Our strategy can be applied to other material systems and can be useful in diverse applications, including thermal emitters and PV.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4939969</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-6658-9853</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Absorbers Absorption Applied physics Broadband Emitters Incidence angle Incident light Photovoltaic cells Polarization Semiconductor materials Solar cells |
| title | Wide-angle, polarization-independent ultrathin broadband visible absorbers |
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