Characterization of locally strained Ge1− x Sn x /Ge fine structures by synchrotron X-ray microdiffraction

We have investigated the formation of the locally strained Ge nanostructure with epitaxial Ge1−xSnx stressors and characterized the microscopic strain field in the Ge1−xSnx/Ge fine-heterostructures by synchrotron X-ray microdiffraction and finite element method (FEM) calculations. We achieved local...

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Veröffentlicht in:Applied physics letters 2015-05, Vol.106 (18)
Hauptverfasser: Ike, Shinichi, Nakatsuka, Osamu, Moriyama, Yoshihiko, Kurosawa, Masashi, Taoka, Noriyuki, Imai, Yasuhiko, Kimura, Shigeru, Tezuka, Tsutomu, Zaima, Shigeaki
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Sprache:eng
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